JPS5628630A - Temperature controlling method of high temperature high pressure reacting cylinder - Google Patents
Temperature controlling method of high temperature high pressure reacting cylinderInfo
- Publication number
- JPS5628630A JPS5628630A JP10359679A JP10359679A JPS5628630A JP S5628630 A JPS5628630 A JP S5628630A JP 10359679 A JP10359679 A JP 10359679A JP 10359679 A JP10359679 A JP 10359679A JP S5628630 A JPS5628630 A JP S5628630A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- temperature
- cylinder
- temperature controlling
- cylinders
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10359679A JPS5628630A (en) | 1979-08-16 | 1979-08-16 | Temperature controlling method of high temperature high pressure reacting cylinder |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10359679A JPS5628630A (en) | 1979-08-16 | 1979-08-16 | Temperature controlling method of high temperature high pressure reacting cylinder |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5628630A true JPS5628630A (en) | 1981-03-20 |
Family
ID=14358140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10359679A Pending JPS5628630A (en) | 1979-08-16 | 1979-08-16 | Temperature controlling method of high temperature high pressure reacting cylinder |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5628630A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59180878U (ja) * | 1983-05-20 | 1984-12-03 | 三菱電機株式会社 | レ−ザ加工装置 |
JPS59223186A (ja) * | 1983-06-01 | 1984-12-14 | Inoue Japax Res Inc | レ−ザ加工装置 |
JPH01197088A (ja) * | 1988-01-29 | 1989-08-08 | Matsushita Electric Ind Co Ltd | レーザ加工装置 |
CN102935345A (zh) * | 2012-11-14 | 2013-02-20 | 天津市先权工贸发展有限公司 | 耐高压石英反应炉 |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
-
1979
- 1979-08-16 JP JP10359679A patent/JPS5628630A/ja active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59180878U (ja) * | 1983-05-20 | 1984-12-03 | 三菱電機株式会社 | レ−ザ加工装置 |
JPH039905Y2 (ja) * | 1983-05-20 | 1991-03-12 | ||
JPS59223186A (ja) * | 1983-06-01 | 1984-12-14 | Inoue Japax Res Inc | レ−ザ加工装置 |
JPH01197088A (ja) * | 1988-01-29 | 1989-08-08 | Matsushita Electric Ind Co Ltd | レーザ加工装置 |
US8937264B2 (en) | 2000-09-13 | 2015-01-20 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US8946591B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Method of manufacturing a semiconductor device formed using a substrate cutting method |
US8946592B2 (en) | 2000-09-13 | 2015-02-03 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US10796959B2 (en) | 2000-09-13 | 2020-10-06 | Hamamatsu Photonics K.K. | Laser processing method and laser processing apparatus |
US10622255B2 (en) | 2002-03-12 | 2020-04-14 | Hamamatsu Photonics K.K. | Substrate dividing method |
US11424162B2 (en) | 2002-03-12 | 2022-08-23 | Hamamatsu Photonics K.K. | Substrate dividing method |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
CN102935345A (zh) * | 2012-11-14 | 2013-02-20 | 天津市先权工贸发展有限公司 | 耐高压石英反应炉 |
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