JPS5618431A - Manufacture of compound semiconductor - Google Patents

Manufacture of compound semiconductor

Info

Publication number
JPS5618431A
JPS5618431A JP9442979A JP9442979A JPS5618431A JP S5618431 A JPS5618431 A JP S5618431A JP 9442979 A JP9442979 A JP 9442979A JP 9442979 A JP9442979 A JP 9442979A JP S5618431 A JPS5618431 A JP S5618431A
Authority
JP
Japan
Prior art keywords
groups
mixed
substrate
znte
film made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9442979A
Other languages
Japanese (ja)
Other versions
JPS628934B2 (en
Inventor
Nobuo Nakayama
Hitoshi Matsumoto
Akihiko Nakano
Seiji Ikegami
Masaru Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9442979A priority Critical patent/JPS5618431A/en
Publication of JPS5618431A publication Critical patent/JPS5618431A/en
Publication of JPS628934B2 publication Critical patent/JPS628934B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To enable the production of the compound semiconductor of II-VI groups or III-V groups at a low price by a method wherein a caking agent is added to an element or a compound of II groups and VI groups, or III groups and V groups, and is pulverized and mixed, and is heated in an inert atmosphere. CONSTITUTION:The powder of Zn, Te compounded in a ratio of slightly excess in Te to the equal molar ratio is mixed with a caking agent and is pulverized and mixed in a mixer to make a muddy state material. The material is printed on a substrate 1 made of alumina, etc., by the screen printing, for an example. After the material is dried, the substrate is heated at 450 deg.C for 30 min in the nitrogen atmosphere to form a sintered ZnTe film 2 on the substrate 1. By this way, a ZnTe semiconductor can be produced easily and at a low price. In the same way, a ZnTe film made of Zn, Te, ZnCl2, an AlSb film made of Al, Sb, an InSb film made of In, Sb can be obtained respectively in the sintered state.
JP9442979A 1979-07-25 1979-07-25 Manufacture of compound semiconductor Granted JPS5618431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9442979A JPS5618431A (en) 1979-07-25 1979-07-25 Manufacture of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9442979A JPS5618431A (en) 1979-07-25 1979-07-25 Manufacture of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS5618431A true JPS5618431A (en) 1981-02-21
JPS628934B2 JPS628934B2 (en) 1987-02-25

Family

ID=14109979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9442979A Granted JPS5618431A (en) 1979-07-25 1979-07-25 Manufacture of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5618431A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373918A (en) * 1991-10-30 1994-12-20 Shimano Inc. Clamp structure for connecting a brake control cable to a brake caliper

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5373918A (en) * 1991-10-30 1994-12-20 Shimano Inc. Clamp structure for connecting a brake control cable to a brake caliper

Also Published As

Publication number Publication date
JPS628934B2 (en) 1987-02-25

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