JPS5617017A - Positioning device using bidirectional diffraction grating - Google Patents
Positioning device using bidirectional diffraction gratingInfo
- Publication number
- JPS5617017A JPS5617017A JP9233079A JP9233079A JPS5617017A JP S5617017 A JPS5617017 A JP S5617017A JP 9233079 A JP9233079 A JP 9233079A JP 9233079 A JP9233079 A JP 9233079A JP S5617017 A JPS5617017 A JP S5617017A
- Authority
- JP
- Japan
- Prior art keywords
- grating
- gap
- substrate
- mask
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002457 bidirectional effect Effects 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To position a mask with a wafer in high accuracy over a wide operation region at high S/N ratio by employing an optical system having no moving part and a small-sized and simple mechanism. CONSTITUTION:A positioning mark 1 of bidirectional diffraction grating having a width P, a length L, an opening angle theta, a grating period D and a grating width W is formed on an SiO2 film on an Si substrate 2 of totally reflecting surface. A gap 3 having a width q and a length M is formed at a Cr film 4 on the mask. A gap is formed between the substrate 2 and the mask 4, and a laser light having a wavelength lambda is irradiated on the mask surface. When the diffraction grating 1 is disposed under the gap 3, the n-th diffraction lights are produced from the grating 1 at an opening angle theta bidirectionally, the gap 3 becomes an opening for irradiating the light, and there occurs a difference between the diffracted light components A deg. and B deg. in two directions A and B by the relative position with the grating 1. Their intensities depend upon the displacement X of the substrate 2. When the substrate is so displaced that signals at intensity points a and b are converted to electric signals with the result that the difference Sig may become zero, they can be completely positioned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9233079A JPS5617017A (en) | 1979-07-20 | 1979-07-20 | Positioning device using bidirectional diffraction grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9233079A JPS5617017A (en) | 1979-07-20 | 1979-07-20 | Positioning device using bidirectional diffraction grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5617017A true JPS5617017A (en) | 1981-02-18 |
Family
ID=14051373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9233079A Pending JPS5617017A (en) | 1979-07-20 | 1979-07-20 | Positioning device using bidirectional diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617017A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139774U (en) * | 1981-02-26 | 1982-09-01 | ||
| JPS59104128A (en) * | 1982-12-06 | 1984-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for positioning by double diffraction gratings |
| JPS6047420A (en) * | 1983-08-26 | 1985-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for alignment by double diffraction gratings |
| JPS6052021A (en) * | 1983-08-31 | 1985-03-23 | Canon Inc | Apparatus and method for detecting position |
| JPS63164316A (en) * | 1986-12-26 | 1988-07-07 | Oki Electric Ind Co Ltd | Formation of alignment mark |
| JPH02293748A (en) * | 1989-05-08 | 1990-12-04 | Matsushita Electron Corp | Mask, production of mask, and method for alignment of mask and wafer |
| JP2009188404A (en) * | 2008-02-01 | 2009-08-20 | Asml Netherlands Bv | Alignment mark and aligning method of substrate with alignment mark |
-
1979
- 1979-07-20 JP JP9233079A patent/JPS5617017A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57139774U (en) * | 1981-02-26 | 1982-09-01 | ||
| JPS59104128A (en) * | 1982-12-06 | 1984-06-15 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for positioning by double diffraction gratings |
| JPS6047420A (en) * | 1983-08-26 | 1985-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Method and device for alignment by double diffraction gratings |
| JPS6355858B2 (en) * | 1983-08-26 | 1988-11-04 | Nippon Telegraph & Telephone | |
| JPS6052021A (en) * | 1983-08-31 | 1985-03-23 | Canon Inc | Apparatus and method for detecting position |
| JPH0145973B2 (en) * | 1983-08-31 | 1989-10-05 | Canon Kk | |
| JPS63164316A (en) * | 1986-12-26 | 1988-07-07 | Oki Electric Ind Co Ltd | Formation of alignment mark |
| JPH0567050B2 (en) * | 1986-12-26 | 1993-09-24 | Oki Electric Ind Co Ltd | |
| JPH02293748A (en) * | 1989-05-08 | 1990-12-04 | Matsushita Electron Corp | Mask, production of mask, and method for alignment of mask and wafer |
| JP2009188404A (en) * | 2008-02-01 | 2009-08-20 | Asml Netherlands Bv | Alignment mark and aligning method of substrate with alignment mark |
| US8208121B2 (en) | 2008-02-01 | 2012-06-26 | Asml Netherlands B.V. | Alignment mark and a method of aligning a substrate comprising such an alignment mark |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69228338T2 (en) | Alignment device | |
| KR870008374A (en) | Method of adjusting relative position between first object and second object and apparatus for implementing the method | |
| US5381210A (en) | Exposing apparatus | |
| DE3881379D1 (en) | LIGHT ELECTRICAL POSITION MEASURING DEVICE. | |
| JPS5617017A (en) | Positioning device using bidirectional diffraction grating | |
| KR930017251A (en) | Apparatus for fabricating a diffraction grating lying on a surface-emission distributed feedback semiconductor laser diode device | |
| JP3030905B2 (en) | Fixed point detector | |
| US6434300B1 (en) | Grating writing method and apparatus | |
| JPS6463902A (en) | Diffraction grating exposure device | |
| KR950011165B1 (en) | Apparatus of exposuring holographics | |
| JPS5657010A (en) | Holographic grating | |
| JPS5587004A (en) | Surface-property measuring method | |
| JPS5612729A (en) | ?alignmening device for ic projection exposure equipment | |
| JPS61116837A (en) | Controlling method for alignment of gap by diffraction grating | |
| JPS5612727A (en) | Aligning device for ic projection exposure apparatus | |
| JPS5744823A (en) | Fourier spectroscope device | |
| JPS6489325A (en) | Aligner | |
| JPH08101322A (en) | Production of transmission type fiber grating filter and apparatus therefor | |
| SU627314A1 (en) | Arrangement for checking photomask dimensions | |
| JPS61290306A (en) | Position detection and exposure using the same | |
| JPH0476489B2 (en) | ||
| JPS6451946A (en) | Laser marking device | |
| JPS57108740A (en) | Device to obtain beam having optional wavelength distribution | |
| JPS6464319A (en) | Aligning device | |
| JPS6482623A (en) | Device for alignment |