JPS56162885A - Solid state image pickup plate - Google Patents

Solid state image pickup plate

Info

Publication number
JPS56162885A
JPS56162885A JP6617880A JP6617880A JPS56162885A JP S56162885 A JPS56162885 A JP S56162885A JP 6617880 A JP6617880 A JP 6617880A JP 6617880 A JP6617880 A JP 6617880A JP S56162885 A JPS56162885 A JP S56162885A
Authority
JP
Japan
Prior art keywords
junction
silicon substrate
image pickup
solid state
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6617880A
Other languages
Japanese (ja)
Inventor
Toshihiko Kawaguchi
Shigenori Iwakuma
Yuichi Soma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP6617880A priority Critical patent/JPS56162885A/en
Publication of JPS56162885A publication Critical patent/JPS56162885A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14645Colour imagers

Abstract

PURPOSE:To eliminate the sheathed filter of a TV camera by forming a plurality of types of junction depths as the distance between the photodetecting surface of the photodetector of a silicon substrate and a P-N junction surface, thereby incorporating a spectral sensitivity characteristics responsive to primary color lights. CONSTITUTION:The junction depths of the distances 51-53 between the photodetecting surfaces of the photodetectors 9-11 of a silicon substrate 1 and a P-N junction surface are formed in types having spectral sensitivity characteristics highly sensitive to the respective primary color lights of red, green and blue lights. Since the relative spectral sensitivities are approximately equal, a sheathed filter becomes unncessary. The mixture ratio of the red, green and blue lights can be selected to an arbitrary value by suitably adjusting the junction area of the photodetectors 9- 11 and the silicon substrate 1.
JP6617880A 1980-05-19 1980-05-19 Solid state image pickup plate Pending JPS56162885A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6617880A JPS56162885A (en) 1980-05-19 1980-05-19 Solid state image pickup plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6617880A JPS56162885A (en) 1980-05-19 1980-05-19 Solid state image pickup plate

Publications (1)

Publication Number Publication Date
JPS56162885A true JPS56162885A (en) 1981-12-15

Family

ID=13308324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6617880A Pending JPS56162885A (en) 1980-05-19 1980-05-19 Solid state image pickup plate

Country Status (1)

Country Link
JP (1) JPS56162885A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2536188A1 (en) * 1982-11-17 1984-05-18 Commissariat Energie Atomique POINT-BY-POINT DOCUMENT READING DEVICE USING MATRIX OF PHOTODETECTOR ELEMENTS
JPS6027164A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Infrared-ray solid-state image pickup element
JPS6037162A (en) * 1983-08-08 1985-02-26 Mitsubishi Electric Corp Photodetector
WO1985003166A1 (en) * 1983-12-29 1985-07-18 Research Development Corporation Of Japan Colour image sensor
JPS6341226B2 (en) * 1982-01-13 1988-08-16 Fuji Xerox Co Ltd
JP2006339333A (en) * 2005-06-01 2006-12-14 Funai Electric Co Ltd Solid-state image sensing device and element thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6341226B2 (en) * 1982-01-13 1988-08-16 Fuji Xerox Co Ltd
FR2536188A1 (en) * 1982-11-17 1984-05-18 Commissariat Energie Atomique POINT-BY-POINT DOCUMENT READING DEVICE USING MATRIX OF PHOTODETECTOR ELEMENTS
EP0112202A2 (en) * 1982-11-17 1984-06-27 Commissariat A L'energie Atomique Point-by-point document reading device using a photodetector array
JPS6027164A (en) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp Infrared-ray solid-state image pickup element
JPH0263311B2 (en) * 1983-07-25 1990-12-27 Mitsubishi Electric Corp
JPS6037162A (en) * 1983-08-08 1985-02-26 Mitsubishi Electric Corp Photodetector
WO1985003166A1 (en) * 1983-12-29 1985-07-18 Research Development Corporation Of Japan Colour image sensor
US4791396A (en) * 1983-12-29 1988-12-13 Jun-ichi Nishizawa Color image sensor
JP2006339333A (en) * 2005-06-01 2006-12-14 Funai Electric Co Ltd Solid-state image sensing device and element thereof
US7679159B2 (en) 2005-06-01 2010-03-16 Funal Electric Co., Ltd. Solid state imaging device and solid state imaging element

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