JPS56161647A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56161647A
JPS56161647A JP6390380A JP6390380A JPS56161647A JP S56161647 A JPS56161647 A JP S56161647A JP 6390380 A JP6390380 A JP 6390380A JP 6390380 A JP6390380 A JP 6390380A JP S56161647 A JPS56161647 A JP S56161647A
Authority
JP
Japan
Prior art keywords
stem
copper
fiber
fixed
proof
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6390380A
Other languages
Japanese (ja)
Inventor
Tasao Soga
Takuzo Ogawa
Tateo Tamamura
Akio Chiba
Seiki Shimizu
Keiichi Kuniya
Masao Funiyu
Hiroshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6390380A priority Critical patent/JPS56161647A/en
Publication of JPS56161647A publication Critical patent/JPS56161647A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001Core members of the layer connector
    • H01L2224/2901Shape
    • H01L2224/29011Shape comprising apertures or cavities
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001Core members of the layer connector
    • H01L2224/29075Plural core members
    • H01L2224/29076Plural core members being mutually engaged together, e.g. through inserts
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    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
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    • H01L2224/8319Arrangement of the layer connectors prior to mounting
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    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
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    • H01L2924/151Die mounting substrate
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    • H01L2924/15312Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
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Abstract

PURPOSE:To decrease the thermal resistance and improve the power cycle-proof of a high power transistor by a method wherein an element is fixed to a stem provided with, for example, copper-carbon fiber which is almost equivalent in the coefficient of thermal expansion and high in thermal conductivity as compared with the element, in the semiconductor device comprising a heat sink and the stem fixed with the heat sink. CONSTITUTION:For example, a substrate of the composite fiber of 50% copper and 50% carbon in the volume ratio is manufactured by plain weaving a fiber bundle 13 of the copper-plated carbon fiber or 7-8mum diameter and hot-pressing the fiber bundles superimposed by two sheets. The composite substrate can be made 2.0W/cm deg.C in the thermal conductivity and 3.5-4.0X10<-6>/ deg.C in the coefficient of thermal expansion. The composite substrate is silver-soldered to an iron stem to form the stem 11 after being Ni-plated. A chip of the power element is fixed by a highly-heated solder and covered with a cap 12 to be made the element. Thereby, the device can be constructed in the low thermal resistance and the power cycle- proof, and in addition, the cost is reduced.
JP6390380A 1980-05-16 1980-05-16 Semiconductor device Pending JPS56161647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6390380A JPS56161647A (en) 1980-05-16 1980-05-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6390380A JPS56161647A (en) 1980-05-16 1980-05-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56161647A true JPS56161647A (en) 1981-12-12

Family

ID=13242737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6390380A Pending JPS56161647A (en) 1980-05-16 1980-05-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56161647A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089439A (en) * 1990-02-02 1992-02-18 Hughes Aircraft Company Process for attaching large area silicon-backed chips to gold-coated surfaces
US6933531B1 (en) 1999-12-24 2005-08-23 Ngk Insulators, Ltd. Heat sink material and method of manufacturing the heat sink material

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5089439A (en) * 1990-02-02 1992-02-18 Hughes Aircraft Company Process for attaching large area silicon-backed chips to gold-coated surfaces
US6933531B1 (en) 1999-12-24 2005-08-23 Ngk Insulators, Ltd. Heat sink material and method of manufacturing the heat sink material

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