JPS56158872A - Method for detecting end point of etching - Google Patents
Method for detecting end point of etchingInfo
- Publication number
- JPS56158872A JPS56158872A JP6064080A JP6064080A JPS56158872A JP S56158872 A JPS56158872 A JP S56158872A JP 6064080 A JP6064080 A JP 6064080A JP 6064080 A JP6064080 A JP 6064080A JP S56158872 A JPS56158872 A JP S56158872A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- end point
- photomask
- area
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- ing And Chemical Polishing (AREA)
Abstract
PURPOSE:To surely detect the end point of etching and improve etching accuracy by providing a passed ray measuring area for deciding the end point of etching treatment at the forming of photomasks to the outside of the effective range used for transfer or the like on the photomask surface. CONSTITUTION:A photomask 1 is provided with an area 3 for measuring light transmittance on the outer side of its effective range 1, and this is fixed on a supporting rotary table 4 of an etching device and is rotated. At the same time, etchant is injected in a linear shape 19 from a nozzle 5, whereby etching treatment is accomplished. At this time, light projectors 6, 9 and photodetectors 7, 9 are provided on the rotating locus of the area 3 of the photomask by leaving a spacing of about 90 deg. or 180 deg.. The light from the projectors passing through the area 3 of the photomask 1 is received in the detectors and at the point of time when the output change rate of the light transmittances maximizes, the end point of the etching treatment is accurately detected.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6064080A JPS56158872A (en) | 1980-05-09 | 1980-05-09 | Method for detecting end point of etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6064080A JPS56158872A (en) | 1980-05-09 | 1980-05-09 | Method for detecting end point of etching |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56158872A true JPS56158872A (en) | 1981-12-07 |
Family
ID=13148112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6064080A Pending JPS56158872A (en) | 1980-05-09 | 1980-05-09 | Method for detecting end point of etching |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56158872A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4569717A (en) * | 1983-05-24 | 1986-02-11 | Dainippon Screen Mfg. Co., Ltd. | Method of surface treatment |
US6703170B1 (en) * | 2000-12-13 | 2004-03-09 | Dupont Photomasks, Inc. | Method and apparatus for reducing loading effects on a semiconductor manufacturing component during an etch process |
-
1980
- 1980-05-09 JP JP6064080A patent/JPS56158872A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4569717A (en) * | 1983-05-24 | 1986-02-11 | Dainippon Screen Mfg. Co., Ltd. | Method of surface treatment |
US6703170B1 (en) * | 2000-12-13 | 2004-03-09 | Dupont Photomasks, Inc. | Method and apparatus for reducing loading effects on a semiconductor manufacturing component during an etch process |
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