JPS56157031A - Mask for exposure to x-rays - Google Patents
Mask for exposure to x-raysInfo
- Publication number
- JPS56157031A JPS56157031A JP6141780A JP6141780A JPS56157031A JP S56157031 A JPS56157031 A JP S56157031A JP 6141780 A JP6141780 A JP 6141780A JP 6141780 A JP6141780 A JP 6141780A JP S56157031 A JPS56157031 A JP S56157031A
- Authority
- JP
- Japan
- Prior art keywords
- film
- si3n4
- mask
- layer
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 238000013518 transcription Methods 0.000 abstract 3
- 230000035897 transcription Effects 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000003014 reinforcing effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910001385 heavy metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To enhance the flatness of the mask for exposure to X-rays by a method wherein a silicon oxide layer having compresive stress is interposed between a transcription pattern supporting layer and an Si reinforcing suppport beam. CONSTITUTION:An Si3N4 layer 3 is provided on the circumference of one side face of an Si monocrystalline substrate 1', an SiO2 film 2' having compressive stress is provided at the circumference on the other side face, and an Si3N4 film 4, an SiO2 film 5 and an Si3N4 film 6 are laminated thereon in order to form the transcription pattern support layer. The center part of the Si substrate 1' is removed by etching to make the remaining region to form the reinforcing support beam, and an opening part 7 is made as a transcription pattern forming region to form a heavy metal pattern of Au, Pt, etc. Accordingly because tensile stress of the Si3N4 film is negated by compressive strees of the SiO2 film, the whole of the mask is made to hold the high flatness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141780A JPS56157031A (en) | 1980-05-09 | 1980-05-09 | Mask for exposure to x-rays |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141780A JPS56157031A (en) | 1980-05-09 | 1980-05-09 | Mask for exposure to x-rays |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56157031A true JPS56157031A (en) | 1981-12-04 |
Family
ID=13170498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6141780A Pending JPS56157031A (en) | 1980-05-09 | 1980-05-09 | Mask for exposure to x-rays |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157031A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116750A (en) * | 1982-12-11 | 1984-07-05 | ユ−ロジル・エレクトロニツク・ゲ−エムベ−ハ− | Radiation mask base layer for x ray lithography and manufacture thereof |
| CN115896690A (en) * | 2022-11-30 | 2023-04-04 | 京东方科技集团股份有限公司 | Fine mask |
-
1980
- 1980-05-09 JP JP6141780A patent/JPS56157031A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116750A (en) * | 1982-12-11 | 1984-07-05 | ユ−ロジル・エレクトロニツク・ゲ−エムベ−ハ− | Radiation mask base layer for x ray lithography and manufacture thereof |
| CN115896690A (en) * | 2022-11-30 | 2023-04-04 | 京东方科技集团股份有限公司 | Fine mask |
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