JPS56154736A - Electrophotographic receptor - Google Patents
Electrophotographic receptorInfo
- Publication number
- JPS56154736A JPS56154736A JP5880980A JP5880980A JPS56154736A JP S56154736 A JPS56154736 A JP S56154736A JP 5880980 A JP5880980 A JP 5880980A JP 5880980 A JP5880980 A JP 5880980A JP S56154736 A JPS56154736 A JP S56154736A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- substrate
- receptor
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
Abstract
PURPOSE:To provide sensitivity from the visible light region to the infrared region to a receptor and relieve the optical fatigue by forming an Se layer and an Se-Te layer on a substrate in order and making the resistance of a region of each of the layers opposite to the substrate to positive holes higher than that of the other region. CONSTITUTION:On substrate 1 of Al or the like, Se having 99.99% purity is vacuum-deposite at 65-75 deg.C substrate temp., and after releasing substrate 1 from the vacuum and feeding O2, Se layer 2 is heat-treated to form region 20 with higher resistance. On region 20 Se-Te is vacuum-deposited at 35-50 deg.C substrate temp. to form Se-Te layer 3, and layer 3 is heat-treated at 65-75 deg.C in air to form region 30 with higher resistance. Se layer 2 has about 40mum thickness, and Se-Te layer 3 is <=1/4 time as thick as layer 2. Layer 3 contains 6-25 atomic% Te. Thus, a receptor having sensitivity even in the infrared region and enabling the use of semiconductor laser as a light source is obtd. The receptor has high dark resistance and undergoes slight optical fatigue.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5880980A JPS56154736A (en) | 1980-05-02 | 1980-05-02 | Electrophotographic receptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5880980A JPS56154736A (en) | 1980-05-02 | 1980-05-02 | Electrophotographic receptor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56154736A true JPS56154736A (en) | 1981-11-30 |
JPS647659B2 JPS647659B2 (en) | 1989-02-09 |
Family
ID=13094924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5880980A Granted JPS56154736A (en) | 1980-05-02 | 1980-05-02 | Electrophotographic receptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56154736A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63279258A (en) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
-
1980
- 1980-05-02 JP JP5880980A patent/JPS56154736A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63279258A (en) * | 1987-05-11 | 1988-11-16 | Matsushita Electric Ind Co Ltd | Electrophotographic sensitive body |
Also Published As
Publication number | Publication date |
---|---|
JPS647659B2 (en) | 1989-02-09 |
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