JPS56146143A - Electrophotographic receptor - Google Patents
Electrophotographic receptorInfo
- Publication number
- JPS56146143A JPS56146143A JP5016780A JP5016780A JPS56146143A JP S56146143 A JPS56146143 A JP S56146143A JP 5016780 A JP5016780 A JP 5016780A JP 5016780 A JP5016780 A JP 5016780A JP S56146143 A JPS56146143 A JP S56146143A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- sb2se3
- electrically conductive
- receptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
Abstract
PURPOSE:To provide sensitivity widely from the visible region to the near infrared region and enable exposure through using semiconductor laser by laminating an Se layer, an Sb2 S3 or Sb2Se3 layer and an Se layer on an electrically conductive substrate in order. CONSTITUTION:Se layer 3 is vapor deposited on electrically conductive substrate 1 in 40-55mum thickness, Sb2Se3 or Sb2 S3 layer 4 on layer 3 in 0.5-5mum thickness, and Se layer 5 on layer 4 in 0.5-2mum thickness to form photoconductive layer 2 consisting of three layers. Thus, a superior receptor is obtd. having photosensitivity from the visible region to the near infrared region up to 950nm and a photosensitivity peak at 620 or 560nm. The receptor enables the use of semiconductor laser such as GaAs laser.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5016780A JPS56146143A (en) | 1980-04-15 | 1980-04-15 | Electrophotographic receptor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5016780A JPS56146143A (en) | 1980-04-15 | 1980-04-15 | Electrophotographic receptor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56146143A true JPS56146143A (en) | 1981-11-13 |
Family
ID=12851639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5016780A Pending JPS56146143A (en) | 1980-04-15 | 1980-04-15 | Electrophotographic receptor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56146143A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1139429A2 (en) * | 2000-03-29 | 2001-10-04 | Shindengen Electric Manufacturing Company, Limited | X-ray detection plate and x-ray detector |
-
1980
- 1980-04-15 JP JP5016780A patent/JPS56146143A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1139429A2 (en) * | 2000-03-29 | 2001-10-04 | Shindengen Electric Manufacturing Company, Limited | X-ray detection plate and x-ray detector |
US6642534B2 (en) * | 2000-03-29 | 2003-11-04 | Shindengen Electric Manufacturing Co., Ltd. | X-ray detection plate and X-ray detector |
EP1139429A3 (en) * | 2000-03-29 | 2005-10-26 | Shindengen Electric Manufacturing Company, Limited | X-ray detection plate and x-ray detector |
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