JPS57148746A - Electrophotographic receptor - Google Patents

Abstract

PURPOSE:To obtain the entitled photoreceptor sensitive to the emission wavelength region of a semiconductor laser derived from (Ga<1->XAlX)As without deteriorating charge retentivity and sensitivity characteristics, by laminating an As2Se3 layer and a P type CdTe layer successively on a conductive substrate. CONSTITUTION:An As2Se3 layer and a P type CdTe layer is successively laminated on a conductive substrate to form the photoconductive layer of an electrophotographic receptor, or further, an Se layer is laminated. The As2Se3 layer serves as a charge transfer layer, in the case of a single CdTe layer its resistivity is up to about 10<7>ohm cm, too low as a photoreceptor, having no charge retentivity, but its resistivity is enhanced by using As2Se3 approximate to 1.5eV, a CdTe handcap Eg value, and laminating this. Since CdTe has 830nm spectral sensitivity peak, approximate to the emission wavelength of the semiconductor laser derived from (Ga1-X.AlX)As, it serves as a carrier generating layer. When the Se layer is provided as the uppermost layer, an effect having characteristics in each function is obtained.