JPS56153836A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS56153836A
JPS56153836A JP5649180A JP5649180A JPS56153836A JP S56153836 A JPS56153836 A JP S56153836A JP 5649180 A JP5649180 A JP 5649180A JP 5649180 A JP5649180 A JP 5649180A JP S56153836 A JPS56153836 A JP S56153836A
Authority
JP
Japan
Prior art keywords
output
circuit
voltage
capacity
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5649180A
Other languages
Japanese (ja)
Inventor
Masamichi Asano
Hiroshi Iwahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5649180A priority Critical patent/JPS56153836A/en
Publication of JPS56153836A publication Critical patent/JPS56153836A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To realize a high-speed operation for a semiconductor circuit, by providing a means that holds the gate voltage of a transistor (TR) in an MOS driving circuit at a level higher than the power supply voltage. CONSTITUTION:The data signal (d) is supplied to the input of a delaying circuit 50 consisting of a 2-stage inverter, and the output A of circuit 50 is connected to the capacity C1. At the same time, the output D of buffer 20' is connected to the other end of C1. The level compensating transistor TR11 is connected between the output D and power source VC, and the gate of TR11 is connected to VC. In the same way, the data signal (d') is supplied to the input of a delaying circuit 60 consisting of a 2-stage inverter. And the output B of circuit 60 plus output D' of buffer 30 are connected to the capacity C2. Then the level compensating TR16 is connected between the output D' and power source VC, and the gate of TR16 is connected to VC. When the signal (d) changes from 0 to 1, the output D is charged by TR1. The voltage of output D is increased by the capacity C1 after a delay time given by the circuit 50 and reaches the voltage VC or higher. Thus the output DOUT of the output-stage buffer 40 is set quickly at 1 level.
JP5649180A 1980-04-28 1980-04-28 Semiconductor circuit Pending JPS56153836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5649180A JPS56153836A (en) 1980-04-28 1980-04-28 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5649180A JPS56153836A (en) 1980-04-28 1980-04-28 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS56153836A true JPS56153836A (en) 1981-11-28

Family

ID=13028554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5649180A Pending JPS56153836A (en) 1980-04-28 1980-04-28 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS56153836A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899032A (en) * 1981-12-08 1983-06-13 Toshiba Corp Semiconductor integrated circuit
JPS6041326A (en) * 1984-07-17 1985-03-05 Hitachi Ltd Inverter circuit
JPS62501739A (en) * 1985-02-08 1987-07-09 エイ・ティ・アンド・ティ・コーポレーション Integrated circuit with variable boosted nodes
JPH01268311A (en) * 1988-04-20 1989-10-26 Seiko Epson Corp Semiconductor integrated device
US6188254B1 (en) 1998-12-22 2001-02-13 Hyundai Electronics Industries Co., Ltd. Data output buffer with high drivability in semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998955A (en) * 1972-12-29 1974-09-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998955A (en) * 1972-12-29 1974-09-19

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5899032A (en) * 1981-12-08 1983-06-13 Toshiba Corp Semiconductor integrated circuit
JPS6041326A (en) * 1984-07-17 1985-03-05 Hitachi Ltd Inverter circuit
JPS62501739A (en) * 1985-02-08 1987-07-09 エイ・ティ・アンド・ティ・コーポレーション Integrated circuit with variable boosted nodes
JPH01268311A (en) * 1988-04-20 1989-10-26 Seiko Epson Corp Semiconductor integrated device
US6188254B1 (en) 1998-12-22 2001-02-13 Hyundai Electronics Industries Co., Ltd. Data output buffer with high drivability in semiconductor device

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