JPS5615092A - Manufacture of semiconductor laser element - Google Patents

Manufacture of semiconductor laser element

Info

Publication number
JPS5615092A
JPS5615092A JP9143979A JP9143979A JPS5615092A JP S5615092 A JPS5615092 A JP S5615092A JP 9143979 A JP9143979 A JP 9143979A JP 9143979 A JP9143979 A JP 9143979A JP S5615092 A JPS5615092 A JP S5615092A
Authority
JP
Japan
Prior art keywords
laser element
ternary semiconductor
mesa
manufacture
selenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9143979A
Other languages
Japanese (ja)
Other versions
JPS5640511B2 (en
Inventor
Michiharu Ito
Kouji Shinohara
Mitsuo Yoshikawa
Hirokazu Fukuda
Takayasu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9143979A priority Critical patent/JPS5615092A/en
Publication of JPS5615092A publication Critical patent/JPS5615092A/en
Publication of JPS5640511B2 publication Critical patent/JPS5640511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0211—Substrates made of ternary or quaternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To improve dimensional accuracy of a laser element by performing an etching with hydrobromic acid on both sides of the expected mesa-striping region, after formation of a P-N junction on a ternary semiconductor substrate consisted of lead, sulphur and selenium. CONSTITUTION:An N-type ternary semiconductor 1 consisted of lead, sulphur and selenium and a P-type ternary semiconductor 2 are joined, a photoresist film is coated on its substrate, a photomask is placed on said film and it is exposed. After removing the photoresist film on the exposed portion, the photoresist films 6A, 6B and 6C of a prescribed pattern are formed, an etching is performed with hydrobromic acid containing 47% of HBr at 20 deg.C for about 5min and a mesa-stripe structure is formed.
JP9143979A 1979-07-17 1979-07-17 Manufacture of semiconductor laser element Granted JPS5615092A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9143979A JPS5615092A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9143979A JPS5615092A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS5615092A true JPS5615092A (en) 1981-02-13
JPS5640511B2 JPS5640511B2 (en) 1981-09-21

Family

ID=14026394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9143979A Granted JPS5615092A (en) 1979-07-17 1979-07-17 Manufacture of semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS5615092A (en)

Also Published As

Publication number Publication date
JPS5640511B2 (en) 1981-09-21

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