JPS5615031A - Molecular beam epitaxial growing apparatus - Google Patents
Molecular beam epitaxial growing apparatusInfo
- Publication number
- JPS5615031A JPS5615031A JP9060179A JP9060179A JPS5615031A JP S5615031 A JPS5615031 A JP S5615031A JP 9060179 A JP9060179 A JP 9060179A JP 9060179 A JP9060179 A JP 9060179A JP S5615031 A JPS5615031 A JP S5615031A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- manipulator
- gate valve
- retaining
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/22—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9060179A JPS5615031A (en) | 1979-07-17 | 1979-07-17 | Molecular beam epitaxial growing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9060179A JPS5615031A (en) | 1979-07-17 | 1979-07-17 | Molecular beam epitaxial growing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5615031A true JPS5615031A (en) | 1981-02-13 |
| JPS63938B2 JPS63938B2 (enExample) | 1988-01-09 |
Family
ID=14002984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9060179A Granted JPS5615031A (en) | 1979-07-17 | 1979-07-17 | Molecular beam epitaxial growing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5615031A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207331A (en) * | 1981-06-15 | 1982-12-20 | Canon Inc | Manufacture of semiconductor device |
| US4508590A (en) * | 1983-09-16 | 1985-04-02 | Raphael Kaplan | Method for the deposition of high-quality crystal epitaxial films of iron |
| JPS6183699A (ja) * | 1984-09-28 | 1986-04-28 | Hitachi Ltd | 分子線エピタキシ装置 |
| JPH035395A (ja) * | 1989-05-31 | 1991-01-11 | Hitachi Ltd | Mbe装置及びその運転方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404661A (en) * | 1965-08-26 | 1968-10-08 | Sperry Rand Corp | Evaporation system |
-
1979
- 1979-07-17 JP JP9060179A patent/JPS5615031A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404661A (en) * | 1965-08-26 | 1968-10-08 | Sperry Rand Corp | Evaporation system |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57207331A (en) * | 1981-06-15 | 1982-12-20 | Canon Inc | Manufacture of semiconductor device |
| US4508590A (en) * | 1983-09-16 | 1985-04-02 | Raphael Kaplan | Method for the deposition of high-quality crystal epitaxial films of iron |
| JPS6183699A (ja) * | 1984-09-28 | 1986-04-28 | Hitachi Ltd | 分子線エピタキシ装置 |
| JPH035395A (ja) * | 1989-05-31 | 1991-01-11 | Hitachi Ltd | Mbe装置及びその運転方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63938B2 (enExample) | 1988-01-09 |
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