JPS56144542A - Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon - Google Patents

Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon

Info

Publication number
JPS56144542A
JPS56144542A JP3144981A JP3144981A JPS56144542A JP S56144542 A JPS56144542 A JP S56144542A JP 3144981 A JP3144981 A JP 3144981A JP 3144981 A JP3144981 A JP 3144981A JP S56144542 A JPS56144542 A JP S56144542A
Authority
JP
Japan
Prior art keywords
silicon
monocrsytalline
selectively
ion etching
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3144981A
Other languages
English (en)
Inventor
Edomondo Fuoogetsuto Roorensu
Ansonii Gudeyura Robaato
Kaataa Horisu Jiyosefu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS56144542A publication Critical patent/JPS56144542A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP3144981A 1980-03-17 1981-03-06 Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon Pending JPS56144542A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13089280A 1980-03-17 1980-03-17

Publications (1)

Publication Number Publication Date
JPS56144542A true JPS56144542A (en) 1981-11-10

Family

ID=22446844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3144981A Pending JPS56144542A (en) 1980-03-17 1981-03-06 Method of selectively reactively ion etching polycrystalline silicon for monocrsytalline silicon

Country Status (1)

Country Link
JP (1) JPS56144542A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197824A (ja) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd 半導体装置のコンタクトホ−ル形成方法
JPH01230237A (ja) * 1987-11-02 1989-09-13 Motorola Inc ポリシリコンを選択的にエッチングする方法
JPH05217956A (ja) * 1982-07-06 1993-08-27 Texas Instr Inc <Ti> 異方性プラズマエッチング方法
US6133157A (en) * 1992-11-30 2000-10-17 Sharp Kabushike Kaisha Dry etching method of a silicon thin film
JP2007234870A (ja) * 2006-03-01 2007-09-13 Hitachi High-Technologies Corp ドライエッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537549A (en) * 1976-07-09 1978-01-24 Mitsubishi Electric Corp Etchant for dry etching
JPS5687667A (en) * 1979-12-20 1981-07-16 Toshiba Corp Reactive ion etching method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS537549A (en) * 1976-07-09 1978-01-24 Mitsubishi Electric Corp Etchant for dry etching
JPS5687667A (en) * 1979-12-20 1981-07-16 Toshiba Corp Reactive ion etching method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05217956A (ja) * 1982-07-06 1993-08-27 Texas Instr Inc <Ti> 異方性プラズマエッチング方法
JPS6197824A (ja) * 1984-10-18 1986-05-16 Sanyo Electric Co Ltd 半導体装置のコンタクトホ−ル形成方法
JPH0518455B2 (ja) * 1984-10-18 1993-03-12 Sanyo Electric Co
JPH01230237A (ja) * 1987-11-02 1989-09-13 Motorola Inc ポリシリコンを選択的にエッチングする方法
US6133157A (en) * 1992-11-30 2000-10-17 Sharp Kabushike Kaisha Dry etching method of a silicon thin film
JP2007234870A (ja) * 2006-03-01 2007-09-13 Hitachi High-Technologies Corp ドライエッチング方法
US8143175B2 (en) 2006-03-01 2012-03-27 Hitachi High-Technologies Corporation Dry etching method

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