JPS56144522A - Grain boundary dielectric layer type semiconductor porcelain composition - Google Patents

Grain boundary dielectric layer type semiconductor porcelain composition

Info

Publication number
JPS56144522A
JPS56144522A JP4836680A JP4836680A JPS56144522A JP S56144522 A JPS56144522 A JP S56144522A JP 4836680 A JP4836680 A JP 4836680A JP 4836680 A JP4836680 A JP 4836680A JP S56144522 A JPS56144522 A JP S56144522A
Authority
JP
Japan
Prior art keywords
dielectric layer
type semiconductor
grain boundary
layer type
porcelain composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4836680A
Other languages
English (en)
Other versions
JPS634339B2 (ja
Inventor
Yoshihiro Matsuo
Gen Itakura
Shiyouichi Ikebe
Tatsuya Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4836680A priority Critical patent/JPS56144522A/ja
Priority to US06/249,885 priority patent/US4362637A/en
Priority to DE8181102768T priority patent/DE3162012D1/de
Priority to EP81102768A priority patent/EP0038044B1/en
Publication of JPS56144522A publication Critical patent/JPS56144522A/ja
Publication of JPS634339B2 publication Critical patent/JPS634339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/47—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on strontium titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1272—Semiconductive ceramic capacitors
    • H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Inorganic Insulating Materials (AREA)
JP4836680A 1980-04-11 1980-04-11 Grain boundary dielectric layer type semiconductor porcelain composition Granted JPS56144522A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4836680A JPS56144522A (en) 1980-04-11 1980-04-11 Grain boundary dielectric layer type semiconductor porcelain composition
US06/249,885 US4362637A (en) 1980-04-11 1981-04-01 Grain boundary layer dielectric ceramic compositions
DE8181102768T DE3162012D1 (en) 1980-04-11 1981-04-10 Grain boundary layer dielectric ceramic compositions
EP81102768A EP0038044B1 (en) 1980-04-11 1981-04-10 Grain boundary layer dielectric ceramic compositions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4836680A JPS56144522A (en) 1980-04-11 1980-04-11 Grain boundary dielectric layer type semiconductor porcelain composition

Publications (2)

Publication Number Publication Date
JPS56144522A true JPS56144522A (en) 1981-11-10
JPS634339B2 JPS634339B2 (ja) 1988-01-28

Family

ID=12801337

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4836680A Granted JPS56144522A (en) 1980-04-11 1980-04-11 Grain boundary dielectric layer type semiconductor porcelain composition

Country Status (4)

Country Link
US (1) US4362637A (ja)
EP (1) EP0038044B1 (ja)
JP (1) JPS56144522A (ja)
DE (1) DE3162012D1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735303A (en) * 1980-07-30 1982-02-25 Taiyo Yuden Kk Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same
JPS5739520A (en) * 1980-08-20 1982-03-04 Matsushita Electric Ind Co Ltd Grain boundary dielectric layer type semiconductor porcelain composition
IT1211079B (it) * 1981-07-20 1989-09-29 Sibit S P A Ora Tioxide Italia Catalizzatori per reazioni di ossido-riduzione fotoassistite.
US4545929A (en) * 1981-07-22 1985-10-08 Taiyo Yuden Co., Ltd. Ceramic materials with a voltage-dependent nonlinear resistance
JPS5920908A (ja) * 1982-07-26 1984-02-02 株式会社村田製作所 温度補償用誘電体磁器組成物
JPS5935402A (ja) * 1982-08-24 1984-02-27 太陽誘電株式会社 電圧依存非直線抵抗特性を有する半導体磁器物質
JPS60264326A (ja) * 1984-06-12 1985-12-27 Otsuka Chem Co Ltd 導電性チタン酸塩誘導体及びその製造法
JPS6224503A (ja) * 1985-07-24 1987-02-02 宇部興産株式会社 誘電体磁器組成物
US4889837A (en) * 1986-09-02 1989-12-26 Tdk Corporation Semiconductive ceramic composition
JP2649341B2 (ja) * 1986-12-04 1997-09-03 太陽誘電株式会社 粒界絶縁型半導体磁器
JPS63141205A (ja) * 1986-12-04 1988-06-13 太陽誘電株式会社 誘電体磁器
JP2649342B2 (ja) * 1986-12-04 1997-09-03 太陽誘電株式会社 電子部品用磁器の製造方法
JP2614228B2 (ja) * 1987-05-20 1997-05-28 キヤノン株式会社 セラミック形成組成物及びこれを用いた半導体磁器基体と誘電体磁器基体並びにコンデンサー
EP0337373A3 (en) * 1988-04-12 1991-02-13 Matsushita Electric Industrial Co., Ltd. Multi-layered dielectric element
JP2821705B2 (ja) * 1990-04-27 1998-11-05 京セラ株式会社 マイクロ波用誘電体磁器組成物
US6627570B2 (en) * 2000-02-09 2003-09-30 Tdk Corporation Dielectric ceramic composition, electronic device, and method of producing the same
EP3351521B1 (en) 2017-01-19 2021-10-06 Samsung Electronics Co., Ltd. Dielectric composites, and multi-layered capacitors and electronic devices comprising thereof
KR102392041B1 (ko) 2017-03-10 2022-04-27 삼성전자주식회사 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자
KR102363288B1 (ko) 2017-03-10 2022-02-14 삼성전자주식회사 유전체, 그 제조 방법, 이를 포함하는 유전체 소자 및 전자 소자
KR102325821B1 (ko) 2017-03-31 2021-11-11 삼성전자주식회사 2차원 페로브스카이트 소재, 이를 포함하는 유전체 및 적층형 커패시터
CN107399967A (zh) * 2017-08-11 2017-11-28 天津大学 一种超低损耗巨介电常数温度稳定型电容器介质材料

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3350212A (en) * 1967-10-31 Shinobu fujiwara ceramic dielectrics
US3666505A (en) * 1968-05-31 1972-05-30 Du Pont High dielectric constant ceramic bodies and compositions for producing same comprising iron oxide
US3933668A (en) * 1973-07-16 1976-01-20 Sony Corporation Intergranular insulation type polycrystalline ceramic semiconductive composition
US3995300A (en) * 1974-08-14 1976-11-30 Tdk Electronics Company, Limited Reduction-reoxidation type semiconducting ceramic capacitor
CA1095704A (en) * 1976-01-20 1981-02-17 Gen Itakura Semiconductive ceramics
NL7802690A (nl) * 1978-03-13 1979-09-17 Philips Nv Sinterlichaam uit halfgeleidend keramisch ma- teriaal op basis van met nioob of tantaal ge- doteerd strontium-titanaat, met elektrisch isolerende lagen op de korrelgrenzen.
JPS54157300A (en) * 1978-06-01 1979-12-12 Matsushita Electric Ind Co Ltd Semi-conductor porcelain capacitorsigma element manufacturing method
US4237084A (en) * 1979-03-26 1980-12-02 University Of Illinois Foundation Method of producing internal boundary layer ceramic compositions

Also Published As

Publication number Publication date
US4362637A (en) 1982-12-07
DE3162012D1 (en) 1984-03-01
EP0038044B1 (en) 1984-01-25
EP0038044A1 (en) 1981-10-21
JPS634339B2 (ja) 1988-01-28

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