JPS56142675A - Semiconductor memory and method of forming same - Google Patents

Semiconductor memory and method of forming same

Info

Publication number
JPS56142675A
JPS56142675A JP63381A JP63381A JPS56142675A JP S56142675 A JPS56142675 A JP S56142675A JP 63381 A JP63381 A JP 63381A JP 63381 A JP63381 A JP 63381A JP S56142675 A JPS56142675 A JP S56142675A
Authority
JP
Japan
Prior art keywords
semiconductor memory
forming same
forming
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63381A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554267B2 (enrdf_load_stackoverflow
Inventor
Jiei Matsukueruroi Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/110,052 external-priority patent/US4373248A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS56142675A publication Critical patent/JPS56142675A/ja
Publication of JPH0554267B2 publication Critical patent/JPH0554267B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP63381A 1980-01-07 1981-01-06 Semiconductor memory and method of forming same Granted JPS56142675A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/110,052 US4373248A (en) 1978-07-12 1980-01-07 Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3238268A Division JP2568770B2 (ja) 1980-01-07 1991-09-18 高密度メモリアレイとそれを形成する方法

Publications (2)

Publication Number Publication Date
JPS56142675A true JPS56142675A (en) 1981-11-07
JPH0554267B2 JPH0554267B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=22330985

Family Applications (2)

Application Number Title Priority Date Filing Date
JP63381A Granted JPS56142675A (en) 1980-01-07 1981-01-06 Semiconductor memory and method of forming same
JP3238268A Expired - Lifetime JP2568770B2 (ja) 1980-01-07 1991-09-18 高密度メモリアレイとそれを形成する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP3238268A Expired - Lifetime JP2568770B2 (ja) 1980-01-07 1991-09-18 高密度メモリアレイとそれを形成する方法

Country Status (1)

Country Link
JP (2) JPS56142675A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222159A (ja) * 1985-01-30 1986-10-02 テキサス　インスツルメンツ　インコ−ポレイテツド 電気的にプログラム可能なメモリ・セル
US5672529A (en) * 1994-03-31 1997-09-30 Hitachi, Ltd. Method of manufacturing nonvolatile semiconductor memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6429063B1 (en) * 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53124085A (en) * 1977-01-26 1978-10-30 Texas Instruments Inc Semiconductor memory
JPS5474383A (en) * 1977-11-26 1979-06-14 Fujitsu Ltd Manufacture of semiconductor device
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119085A (en) * 1976-03-10 1977-10-06 Nec Corp Semiconductor memory element
JPS5377480A (en) * 1976-12-21 1978-07-08 Nec Corp Production of semiconductor integrated circuit device
JPS547889A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor memory element
JPS6042633B2 (ja) * 1978-06-07 1985-09-24 ソニー株式会社 絶縁ゲ−ト型メモリ素子の製法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53124085A (en) * 1977-01-26 1978-10-30 Texas Instruments Inc Semiconductor memory
JPS5474383A (en) * 1977-11-26 1979-06-14 Fujitsu Ltd Manufacture of semiconductor device
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222159A (ja) * 1985-01-30 1986-10-02 テキサス　インスツルメンツ　インコ−ポレイテツド 電気的にプログラム可能なメモリ・セル
US5672529A (en) * 1994-03-31 1997-09-30 Hitachi, Ltd. Method of manufacturing nonvolatile semiconductor memory device
US6406958B2 (en) 1994-03-31 2002-06-18 Hitachi, Ltd. Method of manufacturing nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
JPH056981A (ja) 1993-01-14
JPH0554267B2 (enrdf_load_stackoverflow) 1993-08-12
JP2568770B2 (ja) 1997-01-08

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