JPH0554267B2 - - Google Patents

Info

Publication number
JPH0554267B2
JPH0554267B2 JP56000633A JP63381A JPH0554267B2 JP H0554267 B2 JPH0554267 B2 JP H0554267B2 JP 56000633 A JP56000633 A JP 56000633A JP 63381 A JP63381 A JP 63381A JP H0554267 B2 JPH0554267 B2 JP H0554267B2
Authority
JP
Japan
Prior art keywords
polysilicon
parallel strips
layer
silicon
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56000633A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56142675A (en
Inventor
Jei Matsukueruroi Debitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/110,052 external-priority patent/US4373248A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS56142675A publication Critical patent/JPS56142675A/ja
Publication of JPH0554267B2 publication Critical patent/JPH0554267B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP63381A 1980-01-07 1981-01-06 Semiconductor memory and method of forming same Granted JPS56142675A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/110,052 US4373248A (en) 1978-07-12 1980-01-07 Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP3238268A Division JP2568770B2 (ja) 1980-01-07 1991-09-18 高密度メモリアレイとそれを形成する方法

Publications (2)

Publication Number Publication Date
JPS56142675A JPS56142675A (en) 1981-11-07
JPH0554267B2 true JPH0554267B2 (enrdf_load_stackoverflow) 1993-08-12

Family

ID=22330985

Family Applications (2)

Application Number Title Priority Date Filing Date
JP63381A Granted JPS56142675A (en) 1980-01-07 1981-01-06 Semiconductor memory and method of forming same
JP3238268A Expired - Lifetime JP2568770B2 (ja) 1980-01-07 1991-09-18 高密度メモリアレイとそれを形成する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP3238268A Expired - Lifetime JP2568770B2 (ja) 1980-01-07 1991-09-18 高密度メモリアレイとそれを形成する方法

Country Status (1)

Country Link
JP (2) JPS56142675A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61222159A (ja) * 1985-01-30 1986-10-02 テキサス　インスツルメンツ　インコ−ポレイテツド 電気的にプログラム可能なメモリ・セル
JP3435786B2 (ja) * 1994-03-31 2003-08-11 株式会社日立製作所 不揮発性半導体記憶装置の製造方法
US6429063B1 (en) * 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119085A (en) * 1976-03-10 1977-10-06 Nec Corp Semiconductor memory element
JPS5377480A (en) * 1976-12-21 1978-07-08 Nec Corp Production of semiconductor integrated circuit device
US4151021A (en) * 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
JPS547889A (en) * 1977-06-20 1979-01-20 Nec Corp Semiconductor memory element
JPS5474383A (en) * 1977-11-26 1979-06-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6042633B2 (ja) * 1978-06-07 1985-09-24 ソニー株式会社 絶縁ゲ−ト型メモリ素子の製法
JPS55141750A (en) * 1979-04-23 1980-11-05 Nec Corp Insulated gate type semiconductor device
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
JPH056981A (ja) 1993-01-14
JP2568770B2 (ja) 1997-01-08
JPS56142675A (en) 1981-11-07

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