JPS56138942A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56138942A JPS56138942A JP4167680A JP4167680A JPS56138942A JP S56138942 A JPS56138942 A JP S56138942A JP 4167680 A JP4167680 A JP 4167680A JP 4167680 A JP4167680 A JP 4167680A JP S56138942 A JPS56138942 A JP S56138942A
- Authority
- JP
- Japan
- Prior art keywords
- metal
- layer
- hole part
- wire
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To increase the thickness of an insulating film and prevent improper stepwise disconnection of multilayer wire by burying through-hole part with metal. CONSTITUTION:After an oxide film 2 is formed on a semiconductor substrate 1 on which necessary impurity diffused layer or the like is formed, the first layer wire metal pattern 3 is formed thereon, polyimide resin 4 is further formed thereon, and a through hole is formed by etching. Thereafter, metal 8 is plated on the through hole part. Subsequently, the second layer wire metal 6 is formed by a technique of vacuum evaporation, and a photoresist for patterning is formed. Then, the second layer metal 6 is patterned, then the phtotoresist is removed, and the multilayer wire is completed. Thus, it can prevent the stepwise disconnection of the through hole part step, the improper contact of the wiring layers, the deterioration of high frequency characteristics due to the increase in the static capacity or the like.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4167680A JPS56138942A (en) | 1980-03-31 | 1980-03-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4167680A JPS56138942A (en) | 1980-03-31 | 1980-03-31 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56138942A true JPS56138942A (en) | 1981-10-29 |
Family
ID=12615009
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4167680A Pending JPS56138942A (en) | 1980-03-31 | 1980-03-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56138942A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057648A (en) * | 1983-09-07 | 1985-04-03 | Mitsubishi Electric Corp | Formation of metallic wiring pattern |
-
1980
- 1980-03-31 JP JP4167680A patent/JPS56138942A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057648A (en) * | 1983-09-07 | 1985-04-03 | Mitsubishi Electric Corp | Formation of metallic wiring pattern |
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