JPS56137594A - Control system for nonvolatile memory - Google Patents

Control system for nonvolatile memory

Info

Publication number
JPS56137594A
JPS56137594A JP4081980A JP4081980A JPS56137594A JP S56137594 A JPS56137594 A JP S56137594A JP 4081980 A JP4081980 A JP 4081980A JP 4081980 A JP4081980 A JP 4081980A JP S56137594 A JPS56137594 A JP S56137594A
Authority
JP
Japan
Prior art keywords
memory
data
nonvolatile memory
write
disagreement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4081980A
Other languages
Japanese (ja)
Inventor
Kiyohiko Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP4081980A priority Critical patent/JPS56137594A/en
Publication of JPS56137594A publication Critical patent/JPS56137594A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring

Landscapes

  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To accurately judge the life of memory and to increase the reliability, by reading out the data and comparing it with the data to be written in, immediately after the write-in to the nonvolatile memory. CONSTITUTION:After the write-in to the nonvolatile memory 2, the storage data of the same address is read out without fail, and the agreement between this data and the data to be written in is judged at the comparator 4. If in disagreement, it is possible that the number of write-in of the memory 2 reaches a limit, then the disagreement is informed to the microcomputer being the device to be used. The computer receiving it tries the write-in operation again, and if the result of comparison again is in disagreement, it is switched to the spare area 2'. Thus, the life of nonvolatile memory can accurately be judged and switched to the spare memory, allowing to increase the reliability of memory.
JP4081980A 1980-03-29 1980-03-29 Control system for nonvolatile memory Pending JPS56137594A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4081980A JPS56137594A (en) 1980-03-29 1980-03-29 Control system for nonvolatile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4081980A JPS56137594A (en) 1980-03-29 1980-03-29 Control system for nonvolatile memory

Publications (1)

Publication Number Publication Date
JPS56137594A true JPS56137594A (en) 1981-10-27

Family

ID=12591259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4081980A Pending JPS56137594A (en) 1980-03-29 1980-03-29 Control system for nonvolatile memory

Country Status (1)

Country Link
JP (1) JPS56137594A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989010618A1 (en) * 1988-04-29 1989-11-02 Scientific Atlanta, Inc. Dynamic double buffer
JPH0266797A (en) * 1988-08-31 1990-03-06 Mita Ind Co Ltd Nonvolatile memory write processing method
EP0424191A2 (en) * 1989-10-17 1991-04-24 Sundisk Corporation Device and method for defect handling in semi-conductor memory
EP0455238A2 (en) * 1990-05-02 1991-11-06 DeTeMobil Deutsche Telekom MobilNet GmbH Method for increasing the utilisation period of information carriers with EEPROM
JPH05216001A (en) * 1992-02-06 1993-08-27 Nec Corp Apparatus for producing lcd
JP5014125B2 (en) * 2005-05-30 2012-08-29 スパンション エルエルシー Semiconductor device and program data redundancy method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989010618A1 (en) * 1988-04-29 1989-11-02 Scientific Atlanta, Inc. Dynamic double buffer
US4922456A (en) * 1988-04-29 1990-05-01 Scientific-Atlanta, Inc. Method of reducing wearout in a non-volatile memory with double buffer
JPH0266797A (en) * 1988-08-31 1990-03-06 Mita Ind Co Ltd Nonvolatile memory write processing method
EP0424191A2 (en) * 1989-10-17 1991-04-24 Sundisk Corporation Device and method for defect handling in semi-conductor memory
EP0455238A2 (en) * 1990-05-02 1991-11-06 DeTeMobil Deutsche Telekom MobilNet GmbH Method for increasing the utilisation period of information carriers with EEPROM
JPH05216001A (en) * 1992-02-06 1993-08-27 Nec Corp Apparatus for producing lcd
JP5014125B2 (en) * 2005-05-30 2012-08-29 スパンション エルエルシー Semiconductor device and program data redundancy method

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