JPS5613755A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5613755A
JPS5613755A JP8822479A JP8822479A JPS5613755A JP S5613755 A JPS5613755 A JP S5613755A JP 8822479 A JP8822479 A JP 8822479A JP 8822479 A JP8822479 A JP 8822479A JP S5613755 A JPS5613755 A JP S5613755A
Authority
JP
Japan
Prior art keywords
glass
brazing
production
sio2
zno
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8822479A
Other languages
Japanese (ja)
Inventor
Masaaki Takahashi
Shinichi Hara
Masanobu Hanazono
Yutaka Misawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8822479A priority Critical patent/JPS5613755A/en
Publication of JPS5613755A publication Critical patent/JPS5613755A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Glass Compositions (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prevent the production of cracks and pores in glass and the bleeding of solder or brazing by employing molding glass having a specific mixing proportion of ZnO, B2O3 and SiO2. CONSTITUTION:An Si pellet 11 is bonded between a pair of electrodes 12 by means of brazing 13, and a pair of leads 14 are connected to the axial outsides of the electrodes. The pellet 11 and a portion of the leads 14 are molded with glass 15. The ingredients of the glass 15 are to be 64-68wt% ZnO, 23-29wt% B2O3 and 7- 10wt% SiO2. This permits the glass ingredients to be crystallized at a low temperature, so that the production of cracks due to uncrystallization, and the flowage of solder or brazing due to the crystallizing heat can be prevented. Moreover, the hightened fluidity of the glass prevents the production of pores in the grass in molding.
JP8822479A 1979-07-13 1979-07-13 Semiconductor device Pending JPS5613755A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8822479A JPS5613755A (en) 1979-07-13 1979-07-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8822479A JPS5613755A (en) 1979-07-13 1979-07-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5613755A true JPS5613755A (en) 1981-02-10

Family

ID=13936893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8822479A Pending JPS5613755A (en) 1979-07-13 1979-07-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5613755A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613443B2 (en) * 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613443B2 (en) * 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate

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