JPS56134595A - Silicon rod crucible free zone melting method and device - Google Patents

Silicon rod crucible free zone melting method and device

Info

Publication number
JPS56134595A
JPS56134595A JP2828181A JP2828181A JPS56134595A JP S56134595 A JPS56134595 A JP S56134595A JP 2828181 A JP2828181 A JP 2828181A JP 2828181 A JP2828181 A JP 2828181A JP S56134595 A JPS56134595 A JP S56134595A
Authority
JP
Japan
Prior art keywords
silicon rod
melting method
free zone
zone melting
crucible free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2828181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH024558B2 (enrdf_load_stackoverflow
Inventor
Keraa Uorugangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS56134595A publication Critical patent/JPS56134595A/ja
Publication of JPH024558B2 publication Critical patent/JPH024558B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2828181A 1980-02-27 1981-02-27 Silicon rod crucible free zone melting method and device Granted JPS56134595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803007377 DE3007377A1 (de) 1980-02-27 1980-02-27 Verfahren und vorrichtung zum tiegelfreien zonenschmelzen eines siliciumstabes

Publications (2)

Publication Number Publication Date
JPS56134595A true JPS56134595A (en) 1981-10-21
JPH024558B2 JPH024558B2 (enrdf_load_stackoverflow) 1990-01-29

Family

ID=6095703

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2828181A Granted JPS56134595A (en) 1980-02-27 1981-02-27 Silicon rod crucible free zone melting method and device

Country Status (2)

Country Link
JP (1) JPS56134595A (enrdf_load_stackoverflow)
DE (1) DE3007377A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59199598A (ja) * 1983-04-26 1984-11-12 Kyushu Denshi Kinzoku Kk 結晶成長装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041036B2 (ja) * 1982-08-27 1985-09-13 財団法人 半導体研究振興会 ＧａＡｓ浮遊帯融解草結晶製造装置
JPH0699218B2 (ja) * 1989-04-26 1994-12-07 信越半導体株式会社 単結晶育成用コイル
DE10137857B4 (de) 2001-08-02 2006-11-16 Siltronic Ag Verfahren zur Herstellung eines Einkristalls
DE10137856B4 (de) * 2001-08-02 2007-12-13 Siltronic Ag Durch tiegelloses Zonenziehen hergestellter Einkristall aus Silicium
ES2449699T3 (es) 2009-11-24 2014-03-20 Forschungsverbund Berlin E.V. Procedimiento y dispositivo para la fabricación de monocristales a partir de material semiconductor
DE102010040464A1 (de) 2010-09-09 2012-03-15 Wacker Chemie Ag Verfahren zur Herstellung eines versetzungsfreien einkristallinen Stabes aus Silicium
DE102010043702A1 (de) 2010-11-10 2012-05-10 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium
DE102011077455B4 (de) 2011-06-14 2014-02-06 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium und Reaktor zur Abscheidung von polykristallinem Silicium
DE102011080866A1 (de) 2011-08-12 2013-02-14 Wacker Chemie Ag Verfahren zur Herstellung eines einkristallinen Stabes aus Silicium
DE102011089429A1 (de) 2011-12-21 2013-06-27 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls
DE102011089479A1 (de) 2011-12-21 2013-06-27 Wacker Chemie Ag Polykristallines Silicium
DE102012200992A1 (de) 2012-01-24 2013-07-25 Wacker Chemie Ag Dotierstoffarmes polykristallines Siliciumstück
DE102012200994A1 (de) 2012-01-24 2013-07-25 Wacker Chemie Ag Verfahren zur Bestimmung einer Oberflächen-Verunreinigung von polykristallinem Silicium
DE102012213506A1 (de) 2012-07-31 2014-02-06 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102012213715A1 (de) 2012-08-02 2014-02-06 Siltronic Ag Vorrichtung zur Herstellung eines Einkristalls durch Kristallisieren des Einkristalls an einer Schmelzenzone

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48112271U (enrdf_load_stackoverflow) * 1972-03-30 1973-12-22

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519907C3 (de) * 1966-12-07 1974-01-31 Siemens Ag, 1000 Berlin U. 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen kristalliner Stäbe
DE2557186A1 (de) * 1975-12-18 1977-06-23 Siemens Ag Verfahren und vorrichtung zum herstellen von halbleitermaterialstaeben, insbesondere von siliciumstaeben mit grossen durchmessern, durch tiegelfreies zonenschmelzen
DD124148A1 (enrdf_load_stackoverflow) * 1976-02-19 1977-02-09

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48112271U (enrdf_load_stackoverflow) * 1972-03-30 1973-12-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59199598A (ja) * 1983-04-26 1984-11-12 Kyushu Denshi Kinzoku Kk 結晶成長装置

Also Published As

Publication number Publication date
JPH024558B2 (enrdf_load_stackoverflow) 1990-01-29
DE3007377C2 (enrdf_load_stackoverflow) 1989-02-09
DE3007377A1 (de) 1981-09-03

Similar Documents

Publication Publication Date Title
JPS5752564A (en) Method and device for protecting cuttent filled with melted metal
JPS56134595A (en) Silicon rod crucible free zone melting method and device
HUT38287A (en) Method for producing melt and furnace for carrying out the method
GB2162766B (en) Methods of and apparatus for the melting of silicon
JPS57134251A (en) Device and method of casting metallic filament
JPS53100916A (en) Method of melting and purifying silicon
JPS56136642A (en) Melting device
ZA849670B (en) Process and device for determining and controlling the level of molten metal
JPS56157306A (en) Method and device for manufacturing refractory
JPS56119660A (en) Method of casting monocrystal metallic article
JPS5396013A (en) Method and furnace for melting glass
JPS5691966A (en) Symmetrical horizontal continuous casting method and its device
IL62056A (en) Furnace and method for electric melting under controlled atmospheres
JPS56113982A (en) Method and device for melting metal and its alloy
JPS5779134A (en) Metal refining device and method
SU1061526A1 (ru) Способ получения плоских монокристаллов тугоплавких металлов
JPS5418478A (en) Method and apparatus for crucibleefree zone melting semiconductor rods
JPS57202483A (en) Melting treating device
JPS57112956A (en) Device and method of casting metallic filament
JPS5717413A (en) Method and apparatus for cooling melted calcium carbide
JPS5546364A (en) Method and device for taking out molten material
JPS5326705A (en) Apparatus for zone melting of semiconductor rod without crucible
DE3369599D1 (en) Temperature gradient zone melting process and apparatus
PT73104B (en) Method and apparatus for melting glass
DE3173012D1 (en) Method and apparatus for granulating molten glass