JPS56133874A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56133874A
JPS56133874A JP3668580A JP3668580A JPS56133874A JP S56133874 A JPS56133874 A JP S56133874A JP 3668580 A JP3668580 A JP 3668580A JP 3668580 A JP3668580 A JP 3668580A JP S56133874 A JPS56133874 A JP S56133874A
Authority
JP
Japan
Prior art keywords
region
gate
channel
collector
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3668580A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329836B2 (enrdf_load_stackoverflow
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP3668580A priority Critical patent/JPS56133874A/ja
Publication of JPS56133874A publication Critical patent/JPS56133874A/ja
Publication of JPS6329836B2 publication Critical patent/JPS6329836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/602—Heterojunction gate electrodes for FETs

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3668580A 1980-03-22 1980-03-22 Semiconductor device Granted JPS56133874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3668580A JPS56133874A (en) 1980-03-22 1980-03-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3668580A JPS56133874A (en) 1980-03-22 1980-03-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56133874A true JPS56133874A (en) 1981-10-20
JPS6329836B2 JPS6329836B2 (enrdf_load_stackoverflow) 1988-06-15

Family

ID=12476681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3668580A Granted JPS56133874A (en) 1980-03-22 1980-03-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56133874A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180066A (ja) * 1982-04-16 1983-10-21 Matsushita Electric Ind Co Ltd 静電誘導型半導体装置
JPS59123273A (ja) * 1982-12-28 1984-07-17 Semiconductor Res Found シヨツトキ注入電極型半導体装置
JPS60241262A (ja) * 1984-05-11 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ヘテロ構造バイポ−ラ・トランジスタ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58180066A (ja) * 1982-04-16 1983-10-21 Matsushita Electric Ind Co Ltd 静電誘導型半導体装置
JPS59123273A (ja) * 1982-12-28 1984-07-17 Semiconductor Res Found シヨツトキ注入電極型半導体装置
JPS60241262A (ja) * 1984-05-11 1985-11-30 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ヘテロ構造バイポ−ラ・トランジスタ

Also Published As

Publication number Publication date
JPS6329836B2 (enrdf_load_stackoverflow) 1988-06-15

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