JPS6329836B2 - - Google Patents
Info
- Publication number
- JPS6329836B2 JPS6329836B2 JP55036685A JP3668580A JPS6329836B2 JP S6329836 B2 JPS6329836 B2 JP S6329836B2 JP 55036685 A JP55036685 A JP 55036685A JP 3668580 A JP3668580 A JP 3668580A JP S6329836 B2 JPS6329836 B2 JP S6329836B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- type semiconductor
- semiconductor region
- gate
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 13
- 239000012212 insulator Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/602—Heterojunction gate electrodes for FETs
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3668580A JPS56133874A (en) | 1980-03-22 | 1980-03-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3668580A JPS56133874A (en) | 1980-03-22 | 1980-03-22 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56133874A JPS56133874A (en) | 1981-10-20 |
| JPS6329836B2 true JPS6329836B2 (enrdf_load_stackoverflow) | 1988-06-15 |
Family
ID=12476681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3668580A Granted JPS56133874A (en) | 1980-03-22 | 1980-03-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56133874A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58180066A (ja) * | 1982-04-16 | 1983-10-21 | Matsushita Electric Ind Co Ltd | 静電誘導型半導体装置 |
| JPS59123273A (ja) * | 1982-12-28 | 1984-07-17 | Semiconductor Res Found | シヨツトキ注入電極型半導体装置 |
| US4586071A (en) * | 1984-05-11 | 1986-04-29 | International Business Machines Corporation | Heterostructure bipolar transistor |
-
1980
- 1980-03-22 JP JP3668580A patent/JPS56133874A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56133874A (en) | 1981-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4717940A (en) | MIS controlled gate turn-off thyristor | |
| US4994872A (en) | Insulated gate static induction transistor and integrated circuit including same | |
| JP2663679B2 (ja) | 伝導度変調型ｍｏｓｆｅｔ | |
| JPS62296474A (ja) | 縦形ｍｏｓｆｅｔ | |
| US4989058A (en) | Fast switching lateral insulated gate transistors | |
| US4958208A (en) | Bipolar transistor with abrupt potential discontinuity in collector region | |
| US5359220A (en) | Hybrid bipolar/field-effect power transistor in group III-V material system | |
| JPH0147024B2 (enrdf_load_stackoverflow) | ||
| EP0615292A1 (en) | Insulated gate bipolar transistor | |
| JPH0732249B2 (ja) | 高速スイツチング横形絶縁ゲ−トトランジスタ | |
| US5079607A (en) | Mos type semiconductor device | |
| US4716445A (en) | Heterojunction bipolar transistor having a base region of germanium | |
| US5162877A (en) | Semiconductor integrated circuit device and method of producing same | |
| EP0278386B1 (en) | Heterojunction bipolar transistor | |
| JPS639671B2 (enrdf_load_stackoverflow) | ||
| JPH0132664B2 (enrdf_load_stackoverflow) | ||
| JP3119931B2 (ja) | サイリスタ | |
| US5587595A (en) | Lateral field-effect-controlled semiconductor device on insulating substrate | |
| JPH0560263B2 (enrdf_load_stackoverflow) | ||
| US4255671A (en) | IIL Type semiconductor integrated circuit | |
| JPH0665217B2 (ja) | トランジスタ | |
| US6531748B2 (en) | Semiconductor power component with a reduced parasitic bipolar transistor | |
| JPS6329836B2 (enrdf_load_stackoverflow) | ||
| EP0092645B1 (en) | Transistor and circuit including a transistor | |
| Kajiwara et al. | High speed high voltage static induction thyristor |