JPS56128555A - Ion implantation device - Google Patents

Ion implantation device

Info

Publication number
JPS56128555A
JPS56128555A JP3249380A JP3249380A JPS56128555A JP S56128555 A JPS56128555 A JP S56128555A JP 3249380 A JP3249380 A JP 3249380A JP 3249380 A JP3249380 A JP 3249380A JP S56128555 A JPS56128555 A JP S56128555A
Authority
JP
Japan
Prior art keywords
disc
rotary
chamber
implanting
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3249380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6131590B2 (enExample
Inventor
Takeshi Koike
Atsushi Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3249380A priority Critical patent/JPS56128555A/ja
Priority to US06/243,370 priority patent/US4399365A/en
Publication of JPS56128555A publication Critical patent/JPS56128555A/ja
Publication of JPS6131590B2 publication Critical patent/JPS6131590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P72/7618—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H10P72/7621—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP3249380A 1980-03-13 1980-03-13 Ion implantation device Granted JPS56128555A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3249380A JPS56128555A (en) 1980-03-13 1980-03-13 Ion implantation device
US06/243,370 US4399365A (en) 1980-03-13 1981-03-13 Ion implant chamber for ion implantation system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3249380A JPS56128555A (en) 1980-03-13 1980-03-13 Ion implantation device

Publications (2)

Publication Number Publication Date
JPS56128555A true JPS56128555A (en) 1981-10-08
JPS6131590B2 JPS6131590B2 (enExample) 1986-07-21

Family

ID=12360512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3249380A Granted JPS56128555A (en) 1980-03-13 1980-03-13 Ion implantation device

Country Status (2)

Country Link
US (1) US4399365A (enExample)
JP (1) JPS56128555A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234339A (ja) * 1985-04-10 1986-10-18 Fuji Electric Co Ltd 液体用微粒子検出装置
US4794305A (en) * 1986-05-29 1988-12-27 Mitsubishi Denki Kabushiki Kaisha Substrate support structure for ion implantation device
JPS6427955U (enExample) * 1987-08-08 1989-02-17
JPS6427954U (enExample) * 1987-08-08 1989-02-17
JPH0193043A (ja) * 1987-10-05 1989-04-12 Nissin Electric Co Ltd イオン処理装置
JP2003529217A (ja) * 2000-03-27 2003-09-30 プロテロス， エルエルシー 移動可能なステージとファラデーカップとを用いて均一に帯電した粒子を照射する装置および方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3143527C2 (de) * 1981-11-03 1984-09-20 Bodenseewerk Gerätetechnik GmbH, 7770 Überlingen Gerät zur automatischen Bestimmung der Nordrichtung
US4672210A (en) * 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
US4899059A (en) * 1988-05-18 1990-02-06 Varian Associates, Inc. Disk scanning apparatus for batch ion implanters
DE19522118C1 (de) * 1995-06-19 1997-03-13 Hoechst Ag Amorphe, transparente, UV-stabilisierte Platte aus einem kristallisierbaren Thermoplast, Verfahren zu deren Herstellung sowie deren Verwendung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55104057A (en) * 1979-02-02 1980-08-09 Hitachi Ltd Ion implantation device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61234339A (ja) * 1985-04-10 1986-10-18 Fuji Electric Co Ltd 液体用微粒子検出装置
US4794305A (en) * 1986-05-29 1988-12-27 Mitsubishi Denki Kabushiki Kaisha Substrate support structure for ion implantation device
JPS6427955U (enExample) * 1987-08-08 1989-02-17
JPS6427954U (enExample) * 1987-08-08 1989-02-17
JPH0193043A (ja) * 1987-10-05 1989-04-12 Nissin Electric Co Ltd イオン処理装置
JP2003529217A (ja) * 2000-03-27 2003-09-30 プロテロス， エルエルシー 移動可能なステージとファラデーカップとを用いて均一に帯電した粒子を照射する装置および方法

Also Published As

Publication number Publication date
US4399365A (en) 1983-08-16
JPS6131590B2 (enExample) 1986-07-21

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