JPS56122181A - Manufacture of semiconductor laser element - Google Patents
Manufacture of semiconductor laser elementInfo
- Publication number
- JPS56122181A JPS56122181A JP2556480A JP2556480A JPS56122181A JP S56122181 A JPS56122181 A JP S56122181A JP 2556480 A JP2556480 A JP 2556480A JP 2556480 A JP2556480 A JP 2556480A JP S56122181 A JPS56122181 A JP S56122181A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- laser element
- cleavage
- semiconductor laser
- junction surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3222—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIVBVI compounds, e.g. PbSSe-laser
Abstract
PURPOSE:To prevent the scattering of a laser light from a semiconductor laser element by so forming a substrate that the pressing force for cleavage thereof not may be applied vertically to the P-N junction surface and thus eliminating strain at the P-N junction surface. CONSTITUTION:A crystalline layer of P type PbS1-xSex is diffused on the surface layer of the subsrate of N type Pb S1-x Sex. Thereafter, gold is evaporated as film for electrode on the surface and bottom of the substrate. Subsequently, cutting edge of a razer or the like is brought into contact with the surface of the substrate to cleavage the substrate into shapes of slender rectangles. Then, the cutting edge 11 of the razer is brought into contact with the position mostly isolated from the P-N junction surface 1 formed on the substrate to cleavage the substrate, and a chip of stereoscopic shape is formed for forming the laser element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2556480A JPS56122181A (en) | 1980-02-28 | 1980-02-28 | Manufacture of semiconductor laser element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2556480A JPS56122181A (en) | 1980-02-28 | 1980-02-28 | Manufacture of semiconductor laser element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56122181A true JPS56122181A (en) | 1981-09-25 |
Family
ID=12169420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2556480A Pending JPS56122181A (en) | 1980-02-28 | 1980-02-28 | Manufacture of semiconductor laser element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56122181A (en) |
-
1980
- 1980-02-28 JP JP2556480A patent/JPS56122181A/en active Pending
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