JPS6486508A - Manufacture of chip capacitor - Google Patents
Manufacture of chip capacitorInfo
- Publication number
- JPS6486508A JPS6486508A JP24253387A JP24253387A JPS6486508A JP S6486508 A JPS6486508 A JP S6486508A JP 24253387 A JP24253387 A JP 24253387A JP 24253387 A JP24253387 A JP 24253387A JP S6486508 A JPS6486508 A JP S6486508A
- Authority
- JP
- Japan
- Prior art keywords
- trench
- substrate
- electrode
- grounding
- underside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To prevent the electrical connection of a ground electrode and a top face electrode by forming a first trench, which does not reach up to the surface from the rear of a substrate, shaping a metallic layer onto the whole surface of the rear including the first trench and forming a second trench reaching the surface of the substrate narrower in width than that of the first trench in the first trench. CONSTITUTION:The surface side of a high dielectric-constant substrate 101 is bonded with a support board 104 such as an silicon substrate with wax 105, and a first trench 11, which does not reach the surface from the rear side of the substrate, is shaped by a blade dicing saw, etc., in 80mum depth and 100mum width. For form an electrode for grounding onto a side face and an underside, nichrome in 1000Angstrom and gold in 10000Angstrom are evaporated through a planetarium system, and the electrode 12 for grounding is shaped onto the side face and the underside. A second trench 21 reaching the surface of the substrate is formed into the first trench 11, in which the electrode for grounding on the side face and the underside is shaped, in 120mum depth and 70mum width. Wax 105 is melted and removed, and the substrate is separated from the support board 104, thus acquiring each chip capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24253387A JPS6486508A (en) | 1987-09-29 | 1987-09-29 | Manufacture of chip capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24253387A JPS6486508A (en) | 1987-09-29 | 1987-09-29 | Manufacture of chip capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6486508A true JPS6486508A (en) | 1989-03-31 |
Family
ID=17090527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24253387A Pending JPS6486508A (en) | 1987-09-29 | 1987-09-29 | Manufacture of chip capacitor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6486508A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408731A (en) * | 1992-11-05 | 1995-04-25 | Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement | Process for the manufacture of integrated capacitive transducers |
US5531002A (en) * | 1990-10-12 | 1996-07-02 | Okada; Kazuhiro | Method of manufacturing physical quantity detector |
US6282956B1 (en) | 1994-12-29 | 2001-09-04 | Kazuhiro Okada | Multi-axial angular velocity sensor |
US6314823B1 (en) | 1991-09-20 | 2001-11-13 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
CN105529185A (en) * | 2016-02-22 | 2016-04-27 | 中国振华集团云科电子有限公司 | Novel manufacturing method for capacitor with insulated edges |
CN106098369A (en) * | 2016-06-02 | 2016-11-09 | 中国振华集团云科电子有限公司 | A kind of processing method on ceramic capacitor insulation limit |
-
1987
- 1987-09-29 JP JP24253387A patent/JPS6486508A/en active Pending
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5531002A (en) * | 1990-10-12 | 1996-07-02 | Okada; Kazuhiro | Method of manufacturing physical quantity detector |
US5811693A (en) * | 1990-10-12 | 1998-09-22 | Okada; Kazuhiro | Force detector and acceleration detector and method of manufacturing the same |
US6053057A (en) * | 1990-10-12 | 2000-04-25 | Okada; Kazuhiro | Force detector |
US6158291A (en) * | 1990-10-12 | 2000-12-12 | Okada; Kazuhiro | Force detector and acceleration detector |
US6477903B2 (en) | 1990-10-12 | 2002-11-12 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
US6716253B2 (en) | 1990-10-12 | 2004-04-06 | Kazuhiro Okada | Force detector |
US6779408B2 (en) | 1990-10-12 | 2004-08-24 | Kazuhiro Okada | Force detector |
US6314823B1 (en) | 1991-09-20 | 2001-11-13 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
US5408731A (en) * | 1992-11-05 | 1995-04-25 | Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement | Process for the manufacture of integrated capacitive transducers |
US6282956B1 (en) | 1994-12-29 | 2001-09-04 | Kazuhiro Okada | Multi-axial angular velocity sensor |
CN105529185A (en) * | 2016-02-22 | 2016-04-27 | 中国振华集团云科电子有限公司 | Novel manufacturing method for capacitor with insulated edges |
CN106098369A (en) * | 2016-06-02 | 2016-11-09 | 中国振华集团云科电子有限公司 | A kind of processing method on ceramic capacitor insulation limit |
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