JPS6486508A - Manufacture of chip capacitor - Google Patents

Manufacture of chip capacitor

Info

Publication number
JPS6486508A
JPS6486508A JP24253387A JP24253387A JPS6486508A JP S6486508 A JPS6486508 A JP S6486508A JP 24253387 A JP24253387 A JP 24253387A JP 24253387 A JP24253387 A JP 24253387A JP S6486508 A JPS6486508 A JP S6486508A
Authority
JP
Japan
Prior art keywords
trench
substrate
electrode
grounding
underside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24253387A
Other languages
Japanese (ja)
Inventor
Masami Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24253387A priority Critical patent/JPS6486508A/en
Publication of JPS6486508A publication Critical patent/JPS6486508A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the electrical connection of a ground electrode and a top face electrode by forming a first trench, which does not reach up to the surface from the rear of a substrate, shaping a metallic layer onto the whole surface of the rear including the first trench and forming a second trench reaching the surface of the substrate narrower in width than that of the first trench in the first trench. CONSTITUTION:The surface side of a high dielectric-constant substrate 101 is bonded with a support board 104 such as an silicon substrate with wax 105, and a first trench 11, which does not reach the surface from the rear side of the substrate, is shaped by a blade dicing saw, etc., in 80mum depth and 100mum width. For form an electrode for grounding onto a side face and an underside, nichrome in 1000Angstrom and gold in 10000Angstrom are evaporated through a planetarium system, and the electrode 12 for grounding is shaped onto the side face and the underside. A second trench 21 reaching the surface of the substrate is formed into the first trench 11, in which the electrode for grounding on the side face and the underside is shaped, in 120mum depth and 70mum width. Wax 105 is melted and removed, and the substrate is separated from the support board 104, thus acquiring each chip capacitor.
JP24253387A 1987-09-29 1987-09-29 Manufacture of chip capacitor Pending JPS6486508A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24253387A JPS6486508A (en) 1987-09-29 1987-09-29 Manufacture of chip capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24253387A JPS6486508A (en) 1987-09-29 1987-09-29 Manufacture of chip capacitor

Publications (1)

Publication Number Publication Date
JPS6486508A true JPS6486508A (en) 1989-03-31

Family

ID=17090527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24253387A Pending JPS6486508A (en) 1987-09-29 1987-09-29 Manufacture of chip capacitor

Country Status (1)

Country Link
JP (1) JPS6486508A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408731A (en) * 1992-11-05 1995-04-25 Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement Process for the manufacture of integrated capacitive transducers
US5531002A (en) * 1990-10-12 1996-07-02 Okada; Kazuhiro Method of manufacturing physical quantity detector
US6282956B1 (en) 1994-12-29 2001-09-04 Kazuhiro Okada Multi-axial angular velocity sensor
US6314823B1 (en) 1991-09-20 2001-11-13 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
CN105529185A (en) * 2016-02-22 2016-04-27 中国振华集团云科电子有限公司 Novel manufacturing method for capacitor with insulated edges
CN106098369A (en) * 2016-06-02 2016-11-09 中国振华集团云科电子有限公司 A kind of processing method on ceramic capacitor insulation limit

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5531002A (en) * 1990-10-12 1996-07-02 Okada; Kazuhiro Method of manufacturing physical quantity detector
US5811693A (en) * 1990-10-12 1998-09-22 Okada; Kazuhiro Force detector and acceleration detector and method of manufacturing the same
US6053057A (en) * 1990-10-12 2000-04-25 Okada; Kazuhiro Force detector
US6158291A (en) * 1990-10-12 2000-12-12 Okada; Kazuhiro Force detector and acceleration detector
US6477903B2 (en) 1990-10-12 2002-11-12 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
US6716253B2 (en) 1990-10-12 2004-04-06 Kazuhiro Okada Force detector
US6779408B2 (en) 1990-10-12 2004-08-24 Kazuhiro Okada Force detector
US6314823B1 (en) 1991-09-20 2001-11-13 Kazuhiro Okada Force detector and acceleration detector and method of manufacturing the same
US5408731A (en) * 1992-11-05 1995-04-25 Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement Process for the manufacture of integrated capacitive transducers
US6282956B1 (en) 1994-12-29 2001-09-04 Kazuhiro Okada Multi-axial angular velocity sensor
CN105529185A (en) * 2016-02-22 2016-04-27 中国振华集团云科电子有限公司 Novel manufacturing method for capacitor with insulated edges
CN106098369A (en) * 2016-06-02 2016-11-09 中国振华集团云科电子有限公司 A kind of processing method on ceramic capacitor insulation limit

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