JPS56121630A - Film forming method - Google Patents
Film forming methodInfo
- Publication number
- JPS56121630A JPS56121630A JP2587680A JP2587680A JPS56121630A JP S56121630 A JPS56121630 A JP S56121630A JP 2587680 A JP2587680 A JP 2587680A JP 2587680 A JP2587680 A JP 2587680A JP S56121630 A JPS56121630 A JP S56121630A
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- gas
- film
- chamber
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Photoreceptors In Electrophotography (AREA)
- Silicon Compounds (AREA)
Abstract
PURPOSE:To form a film of uniform physical properties and thickness with good reproducibility by forming a depositing chamber with double-ply pipes consisting of two cylindrical members and introducing a film-forming gas through the gas lead-in pipe disposed spirally on the inside pipe. CONSTITUTION:A depositing device 100 is made into the coaxial cylindrical type formed with a depositing chamber 103 in the space between an inside pipe 101 and an outside pipe 102. A gas lead-in pipe 105 is spirally disposed around the inside pipe 100. A prescribed kind of gas is blown out through the gas blow holes 110 opened in the surface of this pipe 105. When prescribed pressure is developed in the chamber 103, an electric field is formed across electrodes 103 and 107, whereby glow discharge is caused in the chamber 103 to form a plasma atmosphere and the depositing film of prescribed thickness is formed on the surface of a substrate 108. The substrate 108 is beforehand installed on the inside wall surface side of the outside pipe 102 or the outside wall surface side of the inside pipe 101. The rate of film growth is increased by this method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2587680A JPS56121630A (en) | 1980-02-29 | 1980-02-29 | Film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2587680A JPS56121630A (en) | 1980-02-29 | 1980-02-29 | Film forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56121630A true JPS56121630A (en) | 1981-09-24 |
Family
ID=12177981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2587680A Pending JPS56121630A (en) | 1980-02-29 | 1980-02-29 | Film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56121630A (en) |
-
1980
- 1980-02-29 JP JP2587680A patent/JPS56121630A/en active Pending
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