JPS5611680A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5611680A
JPS5611680A JP8544079A JP8544079A JPS5611680A JP S5611680 A JPS5611680 A JP S5611680A JP 8544079 A JP8544079 A JP 8544079A JP 8544079 A JP8544079 A JP 8544079A JP S5611680 A JPS5611680 A JP S5611680A
Authority
JP
Japan
Prior art keywords
inverters
line
input
sense
fett1j
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8544079A
Other languages
Japanese (ja)
Other versions
JPS6220637B2 (en
Inventor
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8544079A priority Critical patent/JPS5611680A/en
Publication of JPS5611680A publication Critical patent/JPS5611680A/en
Publication of JPS6220637B2 publication Critical patent/JPS6220637B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To increase the readout speed, by separating the sense input and the charged output point of the sense amplifier so that the voltage on the digit line can be present as it is at the input of the sense inverter. CONSTITUTION:When the decoder output Yj is selected, the selector use NMOSFETT1j, T2j are conductive, and the input of the sense inverters S1, S2 for constant current charging control is at ground level of almost the same potential as the digit line Dj, and NMOSFETT1-T3 are conductive with the high output of the inverters S1, S2. Thus, the line Dj is charged via FETT1j, the source of FETT1-T3 and the input side of the inverters S1, S2 are separated with FETT1j and no effect of the conductive resistance of FETT1j is present, allowing to cause almost the same potential as the charging potential of the line D1j at the input side of the inverters S1, S2. Accordingly, no charging delay on the line D1j is presented and the readout speed is not lowered.
JP8544079A 1979-07-05 1979-07-05 Semiconductor memory Granted JPS5611680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8544079A JPS5611680A (en) 1979-07-05 1979-07-05 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8544079A JPS5611680A (en) 1979-07-05 1979-07-05 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5611680A true JPS5611680A (en) 1981-02-05
JPS6220637B2 JPS6220637B2 (en) 1987-05-08

Family

ID=13858915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8544079A Granted JPS5611680A (en) 1979-07-05 1979-07-05 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5611680A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070596A (en) * 1983-09-28 1985-04-22 Hitachi Micro Comput Eng Ltd Semiconductor storage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070596A (en) * 1983-09-28 1985-04-22 Hitachi Micro Comput Eng Ltd Semiconductor storage device

Also Published As

Publication number Publication date
JPS6220637B2 (en) 1987-05-08

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