JPS56116666A - Ac semiconductor switch - Google Patents

Ac semiconductor switch

Info

Publication number
JPS56116666A
JPS56116666A JP2018080A JP2018080A JPS56116666A JP S56116666 A JPS56116666 A JP S56116666A JP 2018080 A JP2018080 A JP 2018080A JP 2018080 A JP2018080 A JP 2018080A JP S56116666 A JPS56116666 A JP S56116666A
Authority
JP
Japan
Prior art keywords
thyristor
triac
scr
composite element
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018080A
Other languages
Japanese (ja)
Inventor
Hajime Sawajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2018080A priority Critical patent/JPS56116666A/en
Publication of JPS56116666A publication Critical patent/JPS56116666A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Abstract

PURPOSE:To make it possible to open and close a composite element of a triac and a unilateral thyristor by a single pulse by arranging the P base, P emitter and N emitter into a specified structure. CONSTITUTION:The composite element is constituted by a triac of five-layer structure consisting of N1, P1, N2, P<2> and N3 and a SCR of four-layer structure consisting of N4, P3, N2 and P2. Moreover, the triac is functionally separated into a thyristor 1 consisting of N1, P1, N2 and P2' and a thyristor 2 consisting of N3, P2, N2 and P1'. When a gate trigger is inputted to the gate terminal in the triac portion of the composite element of such structure, the thyristor 1 condusts. Then, when the main power source reverse polarity, because the critical rate of rise of blocking voltage of the thyristor 2 is lower than the rate of rise of supply voltage, the thyristor 2 conducts while the thyristor 1 is in blocking state because of a reverse bias. On the other hand, when a gate trigger is applied to the gate terminal Gs in the SCR portion to allow the SCR to conduct, because the triac portion has a higher conducting voltage than the SCR pirtion, the triac is in blocking state during the succeeding commutation period.
JP2018080A 1980-02-19 1980-02-19 Ac semiconductor switch Pending JPS56116666A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018080A JPS56116666A (en) 1980-02-19 1980-02-19 Ac semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018080A JPS56116666A (en) 1980-02-19 1980-02-19 Ac semiconductor switch

Publications (1)

Publication Number Publication Date
JPS56116666A true JPS56116666A (en) 1981-09-12

Family

ID=12019973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018080A Pending JPS56116666A (en) 1980-02-19 1980-02-19 Ac semiconductor switch

Country Status (1)

Country Link
JP (1) JPS56116666A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2586141A1 (en) * 1985-08-06 1987-02-13 Thomson Csf SENSITIVE THYRISTOR WITH INTEGRATED GAPETTE-CATHODE DECOUPLING

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2586141A1 (en) * 1985-08-06 1987-02-13 Thomson Csf SENSITIVE THYRISTOR WITH INTEGRATED GAPETTE-CATHODE DECOUPLING

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