JPS57155837A - Thyristor triggering device - Google Patents

Thyristor triggering device

Info

Publication number
JPS57155837A
JPS57155837A JP4027581A JP4027581A JPS57155837A JP S57155837 A JPS57155837 A JP S57155837A JP 4027581 A JP4027581 A JP 4027581A JP 4027581 A JP4027581 A JP 4027581A JP S57155837 A JPS57155837 A JP S57155837A
Authority
JP
Japan
Prior art keywords
thyristor
gate
main
over
optical auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4027581A
Other languages
Japanese (ja)
Inventor
Shigeo Konishi
Hirotaka Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP4027581A priority Critical patent/JPS57155837A/en
Publication of JPS57155837A publication Critical patent/JPS57155837A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To achieve the application of a gate pulse with a sufficient amplitude, by connecting an element having a break-over characteristic and an optical auxiliary thyristor in series between the anode and gate of a main thyristor and triggering the main thuristor with the optical auxiliary thyristor. CONSTITUTION:Since a break-over diode 7 is connected between an optical auxiliary thyristor 3 and a current limit resistor 6, even if the thyristor 3 is triggered, no main thyristor 1 is triggered while a voltage between the anode and the gate of the main thyristor 1 is low. That is, until the blake-over diode 7 is broken over, since no gate pulse is applied to the gate of the main thyristor 1, the amplitude of the gate pulse becomes sufficiently great.
JP4027581A 1981-03-23 1981-03-23 Thyristor triggering device Pending JPS57155837A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4027581A JPS57155837A (en) 1981-03-23 1981-03-23 Thyristor triggering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4027581A JPS57155837A (en) 1981-03-23 1981-03-23 Thyristor triggering device

Publications (1)

Publication Number Publication Date
JPS57155837A true JPS57155837A (en) 1982-09-27

Family

ID=12576073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4027581A Pending JPS57155837A (en) 1981-03-23 1981-03-23 Thyristor triggering device

Country Status (1)

Country Link
JP (1) JPS57155837A (en)

Similar Documents

Publication Publication Date Title
DE3889650D1 (en) Integrated semiconductor circuit with an input voltage limiter.
JPS57155837A (en) Thyristor triggering device
EP0373713A3 (en) Semiconductor circuit having an excess voltage protection circuit
ES374318A1 (en) Method for manufacturing pressure sensitive semiconductor device
JPS5286049A (en) Semiconductor switch
JPS5245247A (en) Pulse width convertor circuit
JPS5762630A (en) Control circuit device
JPS5310248A (en) Pulse generating circuit
JPS5748829A (en) Semiconductor switch circuit
JPS5780265A (en) Method for connecting switching element in series in chopper
EP0147135A3 (en) Switching transistor arrangement
KR910003888A (en) Protection circuit against negative excess voltage applied to the power supply of the integrated circuit including the power device associated with the control circuit
GB2007431A (en) Semiconductor component ready for connection
SU799070A1 (en) Device for protecting high-voltage converter thyristors
FR2301926A1 (en) Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor
JPS57180369A (en) High voltage switching control circuit
JPS6489916A (en) Output protection device
JPS55112035A (en) Zero-cross ssr circuit
FR2405576A1 (en) Protective circuit for Schottky power diode - uses parallel-low power Schottky diode whose avalanche voltage is lower than limit voltage of main diode
JPS5314357A (en) Static power inverter
JPS52118517A (en) Dc-dc converter
JPS55166952A (en) Bistable circuit
JPS5219955A (en) Gate turn-off thyristor protector
JPS5288753A (en) Static type voltage regulating system
JPS54152429A (en) Contact information input circuit