FR2301926A1 - Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor - Google Patents

Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor

Info

Publication number
FR2301926A1
FR2301926A1 FR7505052A FR7505052A FR2301926A1 FR 2301926 A1 FR2301926 A1 FR 2301926A1 FR 7505052 A FR7505052 A FR 7505052A FR 7505052 A FR7505052 A FR 7505052A FR 2301926 A1 FR2301926 A1 FR 2301926A1
Authority
FR
France
Prior art keywords
diode
reverse direction
varistor
schottky
protecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7505052A
Other languages
French (fr)
Other versions
FR2301926B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silec Semi Conducteurs SA
Original Assignee
Silec Semi Conducteurs SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silec Semi Conducteurs SA filed Critical Silec Semi Conducteurs SA
Priority to FR7505052A priority Critical patent/FR2301926A1/en
Publication of FR2301926A1 publication Critical patent/FR2301926A1/en
Application granted granted Critical
Publication of FR2301926B1 publication Critical patent/FR2301926B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
    • H02M7/062—Avoiding or suppressing excessive transient voltages or currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12035—Zener diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Schottky power diode protected in the reverse direction. The novelty is that it is connected in parallel with a device possessing a first triggering threshold (1) in the forward direction, where (1) is larger than the forward voltage drop at the terminals of the diode, and a second triggering threshold (2) in the reverse direction where (2) has a value lower than the breakdown voltage in the reverse direction of the diode. The triggering device is pref. a wired or integrated double zener diode, a bilateral diode switch or a varistor. The Schottky diode pref. uses a layer of epitaxial Si with a layer of Mo, the Mo being coated with Ni before applying a silver anode. The Schottky diode is protected by a device connected in parallel which does not participate in the conduction in the forward direction but has rapid triggering action to protect the diode in the reverse direction.
FR7505052A 1975-02-18 1975-02-18 Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor Granted FR2301926A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7505052A FR2301926A1 (en) 1975-02-18 1975-02-18 Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7505052A FR2301926A1 (en) 1975-02-18 1975-02-18 Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor

Publications (2)

Publication Number Publication Date
FR2301926A1 true FR2301926A1 (en) 1976-09-17
FR2301926B1 FR2301926B1 (en) 1978-03-17

Family

ID=9151380

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7505052A Granted FR2301926A1 (en) 1975-02-18 1975-02-18 Protecting schottky power diodes in reverse direction - using double Zener diode, bilateral diode switch, or varistor

Country Status (1)

Country Link
FR (1) FR2301926A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2405576A1 (en) * 1977-10-07 1979-05-04 Lignes Telegraph Telephon Protective circuit for Schottky power diode - uses parallel-low power Schottky diode whose avalanche voltage is lower than limit voltage of main diode
CN108400134A (en) * 2018-05-11 2018-08-14 江苏能华微电子科技发展有限公司 A kind of Schottky diode component and its manufacturing method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2405576A1 (en) * 1977-10-07 1979-05-04 Lignes Telegraph Telephon Protective circuit for Schottky power diode - uses parallel-low power Schottky diode whose avalanche voltage is lower than limit voltage of main diode
CN108400134A (en) * 2018-05-11 2018-08-14 江苏能华微电子科技发展有限公司 A kind of Schottky diode component and its manufacturing method

Also Published As

Publication number Publication date
FR2301926B1 (en) 1978-03-17

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Legal Events

Date Code Title Description
ST Notification of lapse