JPS56115587A - Oxide piezoelectric material - Google Patents

Oxide piezoelectric material

Info

Publication number
JPS56115587A
JPS56115587A JP1791980A JP1791980A JPS56115587A JP S56115587 A JPS56115587 A JP S56115587A JP 1791980 A JP1791980 A JP 1791980A JP 1791980 A JP1791980 A JP 1791980A JP S56115587 A JPS56115587 A JP S56115587A
Authority
JP
Japan
Prior art keywords
sintering
piezoelectric material
xti1
acaa
porcelain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1791980A
Other languages
Japanese (ja)
Inventor
Yohachi Yamashita
Seiichi Yoshida
Katsunori Yokoyama
Tadashi Ido
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1791980A priority Critical patent/JPS56115587A/en
Publication of JPS56115587A publication Critical patent/JPS56115587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides

Abstract

PURPOSE:To provide the oxide piezoelectric material having low dielectric constant and ready sintering with large coupling coefficient ratio by setting x=0.01-0.10, a=0.05-0.35 in (Pb1-aCaa)[(Me1/2Mn1/2)xTi1-x]O3 basic composition. CONSTITUTION:In the basic composition of (Pb1-aCaa)[(Me1/2Mn1/2)xTi1-x]O3, where Me signifies any of Ta and Nb, the value of the coupling coefficient Kp in the expanding direction becomes higher than 5% even if a<0.05 or a>0.35, and spurious is frequently generated. If a>0.35, the dielectric constant becomes higher than 300, which is disadvantageous in the application of the high frequency. If x<0.01, the effect of Pb(Me1/2Mn1/2)O3 for decreasing the sintering temperature of the porcelain is not presented. If x>0.10, the Kp is increased. 0.05-2.0wt% of any of Cr2O3, NiO and Fe2O3 is added to improve the sintering and polarizing properties of the porcelain.
JP1791980A 1980-02-18 1980-02-18 Oxide piezoelectric material Pending JPS56115587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1791980A JPS56115587A (en) 1980-02-18 1980-02-18 Oxide piezoelectric material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1791980A JPS56115587A (en) 1980-02-18 1980-02-18 Oxide piezoelectric material

Publications (1)

Publication Number Publication Date
JPS56115587A true JPS56115587A (en) 1981-09-10

Family

ID=11957162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1791980A Pending JPS56115587A (en) 1980-02-18 1980-02-18 Oxide piezoelectric material

Country Status (1)

Country Link
JP (1) JPS56115587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3444177A1 (en) * 1984-12-04 1986-06-12 Siemens AG, 1000 Berlin und 8000 München PIEZOKERAMIK

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3444177A1 (en) * 1984-12-04 1986-06-12 Siemens AG, 1000 Berlin und 8000 München PIEZOKERAMIK

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