JPS56112753A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS56112753A
JPS56112753A JP1552980A JP1552980A JPS56112753A JP S56112753 A JPS56112753 A JP S56112753A JP 1552980 A JP1552980 A JP 1552980A JP 1552980 A JP1552980 A JP 1552980A JP S56112753 A JPS56112753 A JP S56112753A
Authority
JP
Japan
Prior art keywords
layer
depth
type high
thyristor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1552980A
Other languages
English (en)
Japanese (ja)
Other versions
JPS621259B2 (enrdf_load_stackoverflow
Inventor
Tatsuo Yamazaki
Takahiro Nagano
Shuroku Sakurada
Toshiki Kurosu
Yoichi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP1552980A priority Critical patent/JPS56112753A/ja
Publication of JPS56112753A publication Critical patent/JPS56112753A/ja
Publication of JPS621259B2 publication Critical patent/JPS621259B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices

Landscapes

  • Thyristors (AREA)
JP1552980A 1980-02-13 1980-02-13 Gate turn-off thyristor Granted JPS56112753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1552980A JPS56112753A (en) 1980-02-13 1980-02-13 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1552980A JPS56112753A (en) 1980-02-13 1980-02-13 Gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS56112753A true JPS56112753A (en) 1981-09-05
JPS621259B2 JPS621259B2 (enrdf_load_stackoverflow) 1987-01-12

Family

ID=11891328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1552980A Granted JPS56112753A (en) 1980-02-13 1980-02-13 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS56112753A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189667A (ja) * 1985-02-18 1986-08-23 Toyo Electric Mfg Co Ltd 半導体装置のエミツタ短絡構造
JPS61285766A (ja) * 1985-06-12 1986-12-16 Toshiba Corp 半導体装置の製造方法
JPS62141773A (ja) * 1985-12-16 1987-06-25 Fuji Electric Co Ltd Ｇｔｏサイリスタ
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPH0527594U (ja) * 1991-09-26 1993-04-09 中外炉工業株式会社 炉開口部シール装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189667A (ja) * 1985-02-18 1986-08-23 Toyo Electric Mfg Co Ltd 半導体装置のエミツタ短絡構造
JPS61285766A (ja) * 1985-06-12 1986-12-16 Toshiba Corp 半導体装置の製造方法
US5093705A (en) * 1985-06-28 1992-03-03 Siemens Aktiengesellschaft Thyristor with reduced central zone thickness
JPS62141773A (ja) * 1985-12-16 1987-06-25 Fuji Electric Co Ltd Ｇｔｏサイリスタ
JPH0527594U (ja) * 1991-09-26 1993-04-09 中外炉工業株式会社 炉開口部シール装置

Also Published As

Publication number Publication date
JPS621259B2 (enrdf_load_stackoverflow) 1987-01-12

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