JPS56111240A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56111240A
JPS56111240A JP1126580A JP1126580A JPS56111240A JP S56111240 A JPS56111240 A JP S56111240A JP 1126580 A JP1126580 A JP 1126580A JP 1126580 A JP1126580 A JP 1126580A JP S56111240 A JPS56111240 A JP S56111240A
Authority
JP
Japan
Prior art keywords
oxide film
sio2
stacked
self
field oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1126580A
Other languages
English (en)
Inventor
Shigeharu Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1126580A priority Critical patent/JPS56111240A/ja
Publication of JPS56111240A publication Critical patent/JPS56111240A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP1126580A 1980-02-01 1980-02-01 Semiconductor device and manufacture thereof Pending JPS56111240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1126580A JPS56111240A (en) 1980-02-01 1980-02-01 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1126580A JPS56111240A (en) 1980-02-01 1980-02-01 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56111240A true JPS56111240A (en) 1981-09-02

Family

ID=11773121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1126580A Pending JPS56111240A (en) 1980-02-01 1980-02-01 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56111240A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209140A (ja) * 1982-05-31 1983-12-06 Nec Corp 半導体装置の製造法
JPS59106157A (ja) * 1982-12-10 1984-06-19 Fujitsu Ltd 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58209140A (ja) * 1982-05-31 1983-12-06 Nec Corp 半導体装置の製造法
JPH0252864B2 (ja) * 1982-05-31 1990-11-14 Nippon Electric Co
JPS59106157A (ja) * 1982-12-10 1984-06-19 Fujitsu Ltd 半導体装置の製造方法
JPH0132676B2 (ja) * 1982-12-10 1989-07-10 Fujitsu Ltd

Similar Documents

Publication Publication Date Title
JPS56134757A (en) Complementary type mos semiconductor device and its manufacture
JPS56125868A (en) Thin-film semiconductor device
JPS5561037A (en) Preparation of semiconductor device
JPS55132072A (en) Mos semiconductor device
JPS56111240A (en) Semiconductor device and manufacture thereof
JPS55157241A (en) Manufacture of semiconductor device
JPS54141585A (en) Semiconductor integrated circuit device
JPS57109365A (en) Semiconductor ic device
JPS5513953A (en) Complementary integrated circuit
JPS5679472A (en) Preparing method of mos-type semiconductor device
JPS5648165A (en) Preparation of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS56147466A (en) Semiconductor device
JPS54121683A (en) Semiconductor device and its manufacture
JPS56126957A (en) Manufacture of semiconductor device
JPS54156482A (en) Manufacture for field effect type semiconductor device
JPS55162270A (en) Semiconductor device
JPS56148825A (en) Manufacture of semiconductor device
JPS57128957A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS5513951A (en) Manufacturing method of semiconductor device
JPS57106068A (en) Manufacture of semiconductor device
JPS5779670A (en) Manufacture of semiconductor device
JPS558008A (en) Semi-conductor device manufacturing method
JPS5627924A (en) Semiconductor device and its manufacture