JPS5610980A - Photoconductive element - Google Patents
Photoconductive elementInfo
- Publication number
- JPS5610980A JPS5610980A JP8528079A JP8528079A JPS5610980A JP S5610980 A JPS5610980 A JP S5610980A JP 8528079 A JP8528079 A JP 8528079A JP 8528079 A JP8528079 A JP 8528079A JP S5610980 A JPS5610980 A JP S5610980A
- Authority
- JP
- Japan
- Prior art keywords
- photoconductive element
- high sensitivity
- toxic gas
- highly pure
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain a high sensitivity photoconductive element without using toxic gas such as Cd, H2S or the like by employing Bi2Sn2O7 as a photosensitive base material.
CONSTITUTION: Highly pure Bi2O3, highly pure SnO2 and potassium fluoride (KF) are mixed, retained at 1,100°C for 1hr, and lowered to 850°C at 5°C/hr. When the mixture is quenched from 850°C to room temperature and is rinsed with water to remove the KF therefrom, deformed pyrochlore type Bi2Sn2O7 of transparent crystal can be obtained. When a pair of electrodes are provided on the upper surface of the crystal, there can be obtained a photoconductive element which has a peak photo current of approx. 500nm of wavelength and which is sufficiently durable for actual use. According to this configuration a high sensitivity photoconductive element can be obtained without using toxic gas.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8528079A JPS5610980A (en) | 1979-07-05 | 1979-07-05 | Photoconductive element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8528079A JPS5610980A (en) | 1979-07-05 | 1979-07-05 | Photoconductive element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5610980A true JPS5610980A (en) | 1981-02-03 |
Family
ID=13854148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8528079A Pending JPS5610980A (en) | 1979-07-05 | 1979-07-05 | Photoconductive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5610980A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4846885A (en) * | 1987-11-27 | 1989-07-11 | Haynes International, Inc. | High molybdenum nickel-base alloy |
CN104941627A (en) * | 2015-06-09 | 2015-09-30 | 江苏大学 | Preparation method and use of yttrium-doped bismuth stannate nanocrystallines |
-
1979
- 1979-07-05 JP JP8528079A patent/JPS5610980A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4846885A (en) * | 1987-11-27 | 1989-07-11 | Haynes International, Inc. | High molybdenum nickel-base alloy |
CN104941627A (en) * | 2015-06-09 | 2015-09-30 | 江苏大学 | Preparation method and use of yttrium-doped bismuth stannate nanocrystallines |
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