JPS5610980A - Photoconductive element - Google Patents

Photoconductive element

Info

Publication number
JPS5610980A
JPS5610980A JP8528079A JP8528079A JPS5610980A JP S5610980 A JPS5610980 A JP S5610980A JP 8528079 A JP8528079 A JP 8528079A JP 8528079 A JP8528079 A JP 8528079A JP S5610980 A JPS5610980 A JP S5610980A
Authority
JP
Japan
Prior art keywords
photoconductive element
high sensitivity
toxic gas
highly pure
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8528079A
Other languages
Japanese (ja)
Inventor
Yoji Fukuda
Tomizo Matsuoka
Koji Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8528079A priority Critical patent/JPS5610980A/en
Publication of JPS5610980A publication Critical patent/JPS5610980A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a high sensitivity photoconductive element without using toxic gas such as Cd, H2S or the like by employing Bi2Sn2O7 as a photosensitive base material.
CONSTITUTION: Highly pure Bi2O3, highly pure SnO2 and potassium fluoride (KF) are mixed, retained at 1,100°C for 1hr, and lowered to 850°C at 5°C/hr. When the mixture is quenched from 850°C to room temperature and is rinsed with water to remove the KF therefrom, deformed pyrochlore type Bi2Sn2O7 of transparent crystal can be obtained. When a pair of electrodes are provided on the upper surface of the crystal, there can be obtained a photoconductive element which has a peak photo current of approx. 500nm of wavelength and which is sufficiently durable for actual use. According to this configuration a high sensitivity photoconductive element can be obtained without using toxic gas.
COPYRIGHT: (C)1981,JPO&Japio
JP8528079A 1979-07-05 1979-07-05 Photoconductive element Pending JPS5610980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8528079A JPS5610980A (en) 1979-07-05 1979-07-05 Photoconductive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8528079A JPS5610980A (en) 1979-07-05 1979-07-05 Photoconductive element

Publications (1)

Publication Number Publication Date
JPS5610980A true JPS5610980A (en) 1981-02-03

Family

ID=13854148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8528079A Pending JPS5610980A (en) 1979-07-05 1979-07-05 Photoconductive element

Country Status (1)

Country Link
JP (1) JPS5610980A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4846885A (en) * 1987-11-27 1989-07-11 Haynes International, Inc. High molybdenum nickel-base alloy
CN104941627A (en) * 2015-06-09 2015-09-30 江苏大学 Preparation method and use of yttrium-doped bismuth stannate nanocrystallines

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4846885A (en) * 1987-11-27 1989-07-11 Haynes International, Inc. High molybdenum nickel-base alloy
CN104941627A (en) * 2015-06-09 2015-09-30 江苏大学 Preparation method and use of yttrium-doped bismuth stannate nanocrystallines

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