JPS559494A - Constant voltage threshold device - Google Patents

Constant voltage threshold device

Info

Publication number
JPS559494A
JPS559494A JP6625479A JP6625479A JPS559494A JP S559494 A JPS559494 A JP S559494A JP 6625479 A JP6625479 A JP 6625479A JP 6625479 A JP6625479 A JP 6625479A JP S559494 A JPS559494 A JP S559494A
Authority
JP
Japan
Prior art keywords
constant voltage
voltage threshold
threshold device
constant
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6625479A
Other languages
English (en)
Inventor
Gajiyanan Jiyanb Chiyakurapani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS559494A publication Critical patent/JPS559494A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP6625479A 1978-06-30 1979-05-30 Constant voltage threshold device Pending JPS559494A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/920,920 US4264857A (en) 1978-06-30 1978-06-30 Constant voltage threshold device

Publications (1)

Publication Number Publication Date
JPS559494A true JPS559494A (en) 1980-01-23

Family

ID=25444618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6625479A Pending JPS559494A (en) 1978-06-30 1979-05-30 Constant voltage threshold device

Country Status (4)

Country Link
US (1) US4264857A (ja)
EP (1) EP0006428B1 (ja)
JP (1) JPS559494A (ja)
DE (1) DE2963094D1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5159260A (en) * 1978-03-08 1992-10-27 Hitachi, Ltd. Reference voltage generator device
JPS5816565A (ja) * 1981-07-22 1983-01-31 Hitachi Ltd 絶縁ゲ−ト形電界効果トランジスタ
US4749851A (en) * 1986-08-29 1988-06-07 Technische Universiteit Delft Method and circuit for determining the wave-length of light
US4754168A (en) * 1987-01-28 1988-06-28 National Semiconductor Corporation Charge pump circuit for substrate-bias generator
ZA89871B (en) * 1988-02-04 1990-10-31 Magelian Corp Aust Pty Ltd Shunt regulator
JPH1022462A (ja) 1996-06-28 1998-01-23 Sharp Corp 半導体装置及びその製造方法
JPH10163342A (ja) 1996-12-04 1998-06-19 Sharp Corp 半導体装置
JP3068513B2 (ja) * 1997-07-04 2000-07-24 日本電気株式会社 半導体装置、その製造方法
DE19911463C1 (de) * 1999-03-15 2001-02-08 Siemens Ag Leseverstärkeranordnung mit Feldeffekttransistor mit kurzer Kanallänge und einstellbarer Einsatzspannung
US6399934B1 (en) * 2000-08-18 2002-06-04 Applied Materials, Inc. Optical coupling to gated photocathodes
JP4126872B2 (ja) * 2000-12-12 2008-07-30 サンケン電気株式会社 定電圧ダイオード
US7442600B2 (en) * 2004-08-24 2008-10-28 Micron Technology, Inc. Methods of forming threshold voltage implant regions
JP5068009B2 (ja) * 2005-09-14 2012-11-07 三菱電機株式会社 炭化ケイ素半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953781A (ja) * 1972-09-28 1974-05-24
JPS5047569A (ja) * 1973-08-20 1975-04-28

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3444397A (en) * 1966-07-21 1969-05-13 Hughes Aircraft Co Voltage adjustable breakdown diode employing metal oxide silicon field effect transistor
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor
US3619740A (en) * 1968-10-29 1971-11-09 Nippon Electric Co Integrated circuit having complementary field effect transistors
GB1276791A (en) * 1969-01-22 1972-06-07 Tokyo Shibaura Electric Co Semiconductor device
JPS4915668B1 (ja) * 1969-04-15 1974-04-16
US3648127A (en) * 1970-09-28 1972-03-07 Fairchild Camera Instr Co Reach through or punch{13 through breakdown for gate protection in mos devices
US4033797A (en) * 1973-05-21 1977-07-05 Hughes Aircraft Company Method of manufacturing a complementary metal-insulation-semiconductor circuit
US4053916A (en) * 1975-09-04 1977-10-11 Westinghouse Electric Corporation Silicon on sapphire MOS transistor
US4039869A (en) * 1975-11-28 1977-08-02 Rca Corporation Protection circuit
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
US4066917A (en) * 1976-05-03 1978-01-03 National Semiconductor Corporation Circuit combining bipolar transistor and JFET's to produce a constant voltage characteristic

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953781A (ja) * 1972-09-28 1974-05-24
JPS5047569A (ja) * 1973-08-20 1975-04-28

Also Published As

Publication number Publication date
EP0006428A3 (en) 1980-01-23
EP0006428B1 (de) 1982-06-16
US4264857A (en) 1981-04-28
DE2963094D1 (en) 1982-08-05
EP0006428A2 (de) 1980-01-09

Similar Documents

Publication Publication Date Title
JPS556285A (en) Threshold value setting device
JPS54139286A (en) Electrode device
IL57766A (en) Solartracking device
JPS5574376A (en) Voltage supply device
GB2024049B (en) Foamgenerating device
GB2038223B (en) Cable-cutting device
JPS5515298A (en) Controlled avalanche voltage transistor
JPS559494A (en) Constant voltage threshold device
JPS54116889A (en) High voltage optoocoupler
GB2037715B (en) Sheet-registering device
GB2016801B (en) Referenc voltage generating device
JPS554591A (en) Electrode device
JPS5537700A (en) Threshold device
JPS554699A (en) Current limiting device
GB2013996A (en) Current limiting device
JPS5537690A (en) Improved electiric device
GB2026993B (en) Crimping-on device
GB2017472B (en) Tramlining device
GB2023009B (en) Dilarion device
GB2034562B (en) Tramlining device
GB2015043B (en) Yarnrelaxing device
DE2965793D1 (en) Quick-tightening device
JPS5545098A (en) Cinefilm device
GB2034054B (en) Powermeasuring device
JPS5582405A (en) Voltage nonnlinear resistor