JPS5577149A - Method of and apparatus for discriminating p-type and n-type of semiconductor - Google Patents

Method of and apparatus for discriminating p-type and n-type of semiconductor

Info

Publication number
JPS5577149A
JPS5577149A JP15138878A JP15138878A JPS5577149A JP S5577149 A JPS5577149 A JP S5577149A JP 15138878 A JP15138878 A JP 15138878A JP 15138878 A JP15138878 A JP 15138878A JP S5577149 A JPS5577149 A JP S5577149A
Authority
JP
Japan
Prior art keywords
electrodes
semiconductor
type
detector
needle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15138878A
Other languages
Japanese (ja)
Other versions
JPS5933266B2 (en
Inventor
Ryoichi Takahashi
Yukichi Horioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON DENSHI KINZOKU KK
Mitsubishi Metal Corp
Original Assignee
NIPPON DENSHI KINZOKU KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON DENSHI KINZOKU KK, Mitsubishi Metal Corp filed Critical NIPPON DENSHI KINZOKU KK
Priority to JP15138878A priority Critical patent/JPS5933266B2/en
Publication of JPS5577149A publication Critical patent/JPS5577149A/en
Publication of JPS5933266B2 publication Critical patent/JPS5933266B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To ensure accurate discrimination regardless of contact condition of the electrode by detecting the polarity of the charge yieled by irradiation of light with three needle-like electrodes touching on the semiconductor in such a manner that a constant current flows through two of the electrodes from the power source with one electrode connected to the detector.
CONSTITUTION: Needle-like electrodes 10W20 made of tungsten carbide about 0.5mm in diameter with a sharp tip are arranged to touch on a semiconductor 13 intended to discriminate the conductivity type and a constant current flows through two of the needle electrodes from the constant current source 14. One thereof is connected to one terminal of a detector 16 by way of a lead wire 18 and one free terminal of the two electrodes 10 and 12 are connected to the other terminal of the detector 16 by way of a selection switch 17 and a lead wires 19 and 20. In such an arrangement, when a light pulse is irradiated on the back of the semiconductor 13 from a light pulse generator 15, the charge produced between the electrodes 10 and 12 is positive if the semiconductor is a P-type while negative if it is an n-type. Thus, the conductivity type of semiconductors can be discriminated easily by detecting the polarity thereof with a detector.
COPYRIGHT: (C)1980,JPO&Japio
JP15138878A 1978-12-07 1978-12-07 Method and device for determining P-type and N-type semiconductors Expired JPS5933266B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15138878A JPS5933266B2 (en) 1978-12-07 1978-12-07 Method and device for determining P-type and N-type semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15138878A JPS5933266B2 (en) 1978-12-07 1978-12-07 Method and device for determining P-type and N-type semiconductors

Publications (2)

Publication Number Publication Date
JPS5577149A true JPS5577149A (en) 1980-06-10
JPS5933266B2 JPS5933266B2 (en) 1984-08-14

Family

ID=15517484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15138878A Expired JPS5933266B2 (en) 1978-12-07 1978-12-07 Method and device for determining P-type and N-type semiconductors

Country Status (1)

Country Link
JP (1) JPS5933266B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446944A (en) * 1987-07-22 1989-02-21 Nippon Denzai Kogyo Kenkyusho Noncontact device for discriminating semiconductor polality
US20140223763A1 (en) * 2011-08-25 2014-08-14 Mitsubishi Materials Techno Corporation Vacuum storage method and device for crystalline material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446944A (en) * 1987-07-22 1989-02-21 Nippon Denzai Kogyo Kenkyusho Noncontact device for discriminating semiconductor polality
US20140223763A1 (en) * 2011-08-25 2014-08-14 Mitsubishi Materials Techno Corporation Vacuum storage method and device for crystalline material
US9250014B2 (en) * 2011-08-25 2016-02-02 Mitsubishi Materials Techno Corporation Vacuum storage method and device for crystalline material

Also Published As

Publication number Publication date
JPS5933266B2 (en) 1984-08-14

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