JPS5572032A - Electron beam exposure device - Google Patents
Electron beam exposure deviceInfo
- Publication number
- JPS5572032A JPS5572032A JP14630578A JP14630578A JPS5572032A JP S5572032 A JPS5572032 A JP S5572032A JP 14630578 A JP14630578 A JP 14630578A JP 14630578 A JP14630578 A JP 14630578A JP S5572032 A JPS5572032 A JP S5572032A
- Authority
- JP
- Japan
- Prior art keywords
- pulses
- mask
- pattern
- tilting
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
Abstract
PURPOSE:To correct vertical tilting of a pattern through vertical deflection of an electron beam by counting electric pulses corresponding to the substrate vertical movement in synchronization with the horizontal electron beam scanning. CONSTITUTION:Pulses LPUP from laser length meter due to forward movement FWD of the mask M is counted. When the mask is moved a given distance in Y direction, the beam horizontal deflection is synchronized by synchronizing pulses. This synchronization pulse generation causes the pulses LPUP to be counted CTRA, and the circuit DAC-YC to produce a step analog signal, which is amplified AMP to control the Y-axis deflection. This allows the pattern to be corrected from X- axis tilting to the horizontal direction. For more accurate correction, interpolation pulses are given via the counter CTRB to the circuit DAC-YC. To expose the frame F2, the pattern tilting is corrected by the pulses LPDN corresponding to the reverse movement of the mask M and the interporation pulses. This provides a high-accuracy image.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14630578A JPS5572032A (en) | 1978-11-27 | 1978-11-27 | Electron beam exposure device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14630578A JPS5572032A (en) | 1978-11-27 | 1978-11-27 | Electron beam exposure device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5572032A true JPS5572032A (en) | 1980-05-30 |
Family
ID=15404665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14630578A Pending JPS5572032A (en) | 1978-11-27 | 1978-11-27 | Electron beam exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5572032A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753938A (en) * | 1980-09-17 | 1982-03-31 | Toshiba Corp | Electron beam exposure apparatus |
JPS5891634A (en) * | 1981-11-26 | 1983-05-31 | Toshiba Corp | Measurement of revolution correction amount of deflection electrode |
-
1978
- 1978-11-27 JP JP14630578A patent/JPS5572032A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753938A (en) * | 1980-09-17 | 1982-03-31 | Toshiba Corp | Electron beam exposure apparatus |
JPS631743B2 (en) * | 1980-09-17 | 1988-01-13 | Tokyo Shibaura Electric Co | |
JPS5891634A (en) * | 1981-11-26 | 1983-05-31 | Toshiba Corp | Measurement of revolution correction amount of deflection electrode |
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