JPS5571022A - Manufacture of compound-semiconductor element - Google Patents
Manufacture of compound-semiconductor elementInfo
- Publication number
- JPS5571022A JPS5571022A JP14408278A JP14408278A JPS5571022A JP S5571022 A JPS5571022 A JP S5571022A JP 14408278 A JP14408278 A JP 14408278A JP 14408278 A JP14408278 A JP 14408278A JP S5571022 A JPS5571022 A JP S5571022A
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- film
- layer
- electrodes
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent overetching of electrodes and a compound semiconductor and to remove a crashed layer which is generated in forming a pellet, by covering a plane on which electrides are formed by a protective film made of regist and the like, under the state before the pellet has been formed.
CONSTITUTION: A p,n-junction 24 is obtained by forming an n-type GaP layer 22 and a p-type GaP layer 23 on an n-type GaP substrate 21. Electrodes 21a and 23a are selectively formed on the substrate 21 and the layer 23. A resist film 25 which is to become an electrode protection film is applied on both surfaces containing the electrodes 21a and 23a; the film 25 is made to become a thin film with a spinner; prebake is made; both surfaces are exposed to a ultra-violet ray; and the post-bake is made. The side of the substrate 21 is contacted to an insulating sheet 26, and a GaP light-emitting-element pellet is cut out with a scriber. The product is immersed into Trichlene liquid together with the sheet 26, and the Gap light-emitting pellet is separated. The pellet is washed and immersed into aqua regia and a crushed layer is removed. The film 25 is exfoliated, and the pellet is washed and dried.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14408278A JPS5571022A (en) | 1978-11-24 | 1978-11-24 | Manufacture of compound-semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14408278A JPS5571022A (en) | 1978-11-24 | 1978-11-24 | Manufacture of compound-semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5571022A true JPS5571022A (en) | 1980-05-28 |
Family
ID=15353824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14408278A Pending JPS5571022A (en) | 1978-11-24 | 1978-11-24 | Manufacture of compound-semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5571022A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61214587A (en) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | Manufacture of semiconductor device |
US5457072A (en) * | 1993-03-10 | 1995-10-10 | Mitsubishi Denki Kabushiki Kaisha | Process for dicing a semiconductor wafer having a plated heat sink using a temporary substrate |
-
1978
- 1978-11-24 JP JP14408278A patent/JPS5571022A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61214587A (en) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | Manufacture of semiconductor device |
US5457072A (en) * | 1993-03-10 | 1995-10-10 | Mitsubishi Denki Kabushiki Kaisha | Process for dicing a semiconductor wafer having a plated heat sink using a temporary substrate |
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