JPS5571022A - Manufacture of compound-semiconductor element - Google Patents

Manufacture of compound-semiconductor element

Info

Publication number
JPS5571022A
JPS5571022A JP14408278A JP14408278A JPS5571022A JP S5571022 A JPS5571022 A JP S5571022A JP 14408278 A JP14408278 A JP 14408278A JP 14408278 A JP14408278 A JP 14408278A JP S5571022 A JPS5571022 A JP S5571022A
Authority
JP
Japan
Prior art keywords
pellet
film
layer
electrodes
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14408278A
Other languages
Japanese (ja)
Inventor
Noburo Yasuda
Kyozo Ide
Tatsuhiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14408278A priority Critical patent/JPS5571022A/en
Publication of JPS5571022A publication Critical patent/JPS5571022A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prevent overetching of electrodes and a compound semiconductor and to remove a crashed layer which is generated in forming a pellet, by covering a plane on which electrides are formed by a protective film made of regist and the like, under the state before the pellet has been formed.
CONSTITUTION: A p,n-junction 24 is obtained by forming an n-type GaP layer 22 and a p-type GaP layer 23 on an n-type GaP substrate 21. Electrodes 21a and 23a are selectively formed on the substrate 21 and the layer 23. A resist film 25 which is to become an electrode protection film is applied on both surfaces containing the electrodes 21a and 23a; the film 25 is made to become a thin film with a spinner; prebake is made; both surfaces are exposed to a ultra-violet ray; and the post-bake is made. The side of the substrate 21 is contacted to an insulating sheet 26, and a GaP light-emitting-element pellet is cut out with a scriber. The product is immersed into Trichlene liquid together with the sheet 26, and the Gap light-emitting pellet is separated. The pellet is washed and immersed into aqua regia and a crushed layer is removed. The film 25 is exfoliated, and the pellet is washed and dried.
COPYRIGHT: (C)1980,JPO&Japio
JP14408278A 1978-11-24 1978-11-24 Manufacture of compound-semiconductor element Pending JPS5571022A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14408278A JPS5571022A (en) 1978-11-24 1978-11-24 Manufacture of compound-semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14408278A JPS5571022A (en) 1978-11-24 1978-11-24 Manufacture of compound-semiconductor element

Publications (1)

Publication Number Publication Date
JPS5571022A true JPS5571022A (en) 1980-05-28

Family

ID=15353824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14408278A Pending JPS5571022A (en) 1978-11-24 1978-11-24 Manufacture of compound-semiconductor element

Country Status (1)

Country Link
JP (1) JPS5571022A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214587A (en) * 1985-03-20 1986-09-24 Toshiba Corp Manufacture of semiconductor device
US5457072A (en) * 1993-03-10 1995-10-10 Mitsubishi Denki Kabushiki Kaisha Process for dicing a semiconductor wafer having a plated heat sink using a temporary substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214587A (en) * 1985-03-20 1986-09-24 Toshiba Corp Manufacture of semiconductor device
US5457072A (en) * 1993-03-10 1995-10-10 Mitsubishi Denki Kabushiki Kaisha Process for dicing a semiconductor wafer having a plated heat sink using a temporary substrate

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