JPS556877A - Semiconductor luminous element - Google Patents

Semiconductor luminous element

Info

Publication number
JPS556877A
JPS556877A JP7963078A JP7963078A JPS556877A JP S556877 A JPS556877 A JP S556877A JP 7963078 A JP7963078 A JP 7963078A JP 7963078 A JP7963078 A JP 7963078A JP S556877 A JPS556877 A JP S556877A
Authority
JP
Japan
Prior art keywords
bonding pressure
luminous
luminous range
slip
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7963078A
Other languages
Japanese (ja)
Inventor
Kazuto Matsui
Jun Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7963078A priority Critical patent/JPS556877A/en
Publication of JPS556877A publication Critical patent/JPS556877A/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To prevent the adverse affecting of the slip and defects of crystals on a luminous range, by mounting a groove for obviating the reaching of bonding pressure up to the luminous range to a luminous element chip.
CONSTITUTION: At a location between a bonding pressure applying position 14 of a diode chip 11 and a luminous range 12, a groove 16 intercepting a sliding surface extending in the luminous range 12 direction from the bonding pressure applying position 14 is installed so as to reach the inside from a main furface at the N type GaAs substrate 1 side of the diode chip 11. This device is not subject to the influence of the slip and defects of crystals due to the application of bonding pressure, and the characteristics of a laser doide do not beome worse and the deterioration of characteristics is not promoted.
COPYRIGHT: (C)1980,JPO&Japio
JP7963078A 1978-06-29 1978-06-29 Semiconductor luminous element Pending JPS556877A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7963078A JPS556877A (en) 1978-06-29 1978-06-29 Semiconductor luminous element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7963078A JPS556877A (en) 1978-06-29 1978-06-29 Semiconductor luminous element

Publications (1)

Publication Number Publication Date
JPS556877A true JPS556877A (en) 1980-01-18

Family

ID=13695392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7963078A Pending JPS556877A (en) 1978-06-29 1978-06-29 Semiconductor luminous element

Country Status (1)

Country Link
JP (1) JPS556877A (en)

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