JPS5567165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5567165A
JPS5567165A JP14133478A JP14133478A JPS5567165A JP S5567165 A JPS5567165 A JP S5567165A JP 14133478 A JP14133478 A JP 14133478A JP 14133478 A JP14133478 A JP 14133478A JP S5567165 A JPS5567165 A JP S5567165A
Authority
JP
Japan
Prior art keywords
charge
region
gate
voltage
pulse voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14133478A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138624B2 (enrdf_load_stackoverflow
Inventor
Hiroto Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14133478A priority Critical patent/JPS5567165A/ja
Publication of JPS5567165A publication Critical patent/JPS5567165A/ja
Publication of JPS6138624B2 publication Critical patent/JPS6138624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP14133478A 1978-11-15 1978-11-15 Semiconductor device Granted JPS5567165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14133478A JPS5567165A (en) 1978-11-15 1978-11-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14133478A JPS5567165A (en) 1978-11-15 1978-11-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5567165A true JPS5567165A (en) 1980-05-21
JPS6138624B2 JPS6138624B2 (enrdf_load_stackoverflow) 1986-08-30

Family

ID=15289524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14133478A Granted JPS5567165A (en) 1978-11-15 1978-11-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5567165A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288466A (ja) * 1985-06-17 1986-12-18 Fujitsu Ltd 電荷検出回路
JPH0212967A (ja) * 1988-06-30 1990-01-17 Nec Corp 固体撮像装置
FR2657207A1 (fr) * 1990-01-16 1991-07-19 Thomson Csf Dispositif a transfert de charges a dynamique elargie.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006095903A1 (ja) * 2005-03-11 2006-09-14 National University Corporation Toyohashi University Of Technology 累積型化学・物理現象検出装置
WO2007108465A1 (ja) * 2006-03-20 2007-09-27 National University Corporation Toyohashi University Of Technology 累積型化学・物理現象検出方法及びその装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288466A (ja) * 1985-06-17 1986-12-18 Fujitsu Ltd 電荷検出回路
JPH0212967A (ja) * 1988-06-30 1990-01-17 Nec Corp 固体撮像装置
FR2657207A1 (fr) * 1990-01-16 1991-07-19 Thomson Csf Dispositif a transfert de charges a dynamique elargie.

Also Published As

Publication number Publication date
JPS6138624B2 (enrdf_load_stackoverflow) 1986-08-30

Similar Documents

Publication Publication Date Title
JPS5310284A (en) Semiconductor device with schottky barrier electrode and method of producing same
JPS5567165A (en) Semiconductor device
IT1260463B (it) Apparecchiatura per provare automaticamente un modo di sollecitazione di un dispositivo di memoria a semiconduttore
JPS5470762A (en) Semiconductor device
GB1454322A (en) Semiconductor device
JPS56159900A (en) Method for driving electric charge transfer element
GB1347776A (en) Pulse charge to voltage converter
JPS5676063A (en) Evaluation of semiconductor element
JPS5625297A (en) Charge transfer type delay line and its driving method
JPS5268942A (en) Anti time-limiting apparatus
JPS5591855A (en) Semiconductor memory device
JPS6464261A (en) Charge transfer element and its driving method
JPS5439343A (en) Bonding method
JPS5211770A (en) Semiconductor device
JPS5754367A (en) Sample holding circuit
ONEILL Peak holding circuit for extremely narrow pulses[Patent]
SU1091314A1 (ru) Одновибратор
JPS5483483A (en) High voltage discharge detection circuit
JPS53145482A (en) Deffect analyzing method of semiconductors
STIVERS Oxide charge traps and interface states at the silicon- silicon dioxide interface[Ph. D. Thesis]
JPS5516273A (en) Method of measuring critical value characteristic of thyristor
JPS5544988A (en) Level change detector
CHU Surface interactions in a plasma diode[Ph. D. Thesis]
JPS56160080A (en) Photoelectric conversion unit
BRAEUNIG An investigation of the effect of ionizing radiation on the behaviour of low frequency noise and the surface recombination velocity of MOS structures(Measuring forward current and noise current of p-n junction before and after irradiation with ionizing radiation to determine effects of energy states at Si-SiO 2 interface)