JPS5567165A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5567165A
JPS5567165A JP14133478A JP14133478A JPS5567165A JP S5567165 A JPS5567165 A JP S5567165A JP 14133478 A JP14133478 A JP 14133478A JP 14133478 A JP14133478 A JP 14133478A JP S5567165 A JPS5567165 A JP S5567165A
Authority
JP
Japan
Prior art keywords
charge
region
gate
voltage
pulse voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14133478A
Other languages
Japanese (ja)
Other versions
JPS6138624B2 (en
Inventor
Hiroto Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP14133478A priority Critical patent/JPS5567165A/en
Publication of JPS5567165A publication Critical patent/JPS5567165A/en
Publication of JPS6138624B2 publication Critical patent/JPS6138624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain a charge detector that sensitivity is high, a duty ratio is large and is provided with an unnecessary charge removing function, by mounting a charge storage portion before a charge detecting portion. CONSTITUTION:The voltage of an electrode 18 is adjusted so that charge be injected to a storage region 19 in the rise of pulses applied to a final electrode 3a of a CCD, and the charge of each bit is successively stored to the region 19 reset. Previous charge stored to a region 20 is reset by beforehand applying pulse voltage to a gate 24, thus preparing the next injection of charge. The charge of the region 19 is sent to the region 20 by applying voltage to a gate 21. Pulse voltage at that time is adjusted, unnecessary charge is left to the region 19 and true signal charge integrated is injected to the region 20. The true signal charge is put out to a terminal 25 through a gate 22. Then, the unnecessary charge of the region 29 is removed by applying pulse voltage to a gate 23, and the next stage is prepared. According to this method, a duty ratio is remarkably improved.
JP14133478A 1978-11-15 1978-11-15 Semiconductor device Granted JPS5567165A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14133478A JPS5567165A (en) 1978-11-15 1978-11-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14133478A JPS5567165A (en) 1978-11-15 1978-11-15 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5567165A true JPS5567165A (en) 1980-05-21
JPS6138624B2 JPS6138624B2 (en) 1986-08-30

Family

ID=15289524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14133478A Granted JPS5567165A (en) 1978-11-15 1978-11-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5567165A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288466A (en) * 1985-06-17 1986-12-18 Fujitsu Ltd Charge detecting circuit
JPH0212967A (en) * 1988-06-30 1990-01-17 Nec Corp Solid state image sensor
FR2657207A1 (en) * 1990-01-16 1991-07-19 Thomson Csf DEVICE FOR TRANSFERRING EXPANDED DYNAMIC LOADS.

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006095903A1 (en) * 2005-03-11 2006-09-14 National University Corporation Toyohashi University Of Technology Cumulative chemical/physical phenomenon detecting apparatus
JP5335415B2 (en) * 2006-03-20 2013-11-06 国立大学法人豊橋技術科学大学 Cumulative chemical / physical phenomenon detection method and apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61288466A (en) * 1985-06-17 1986-12-18 Fujitsu Ltd Charge detecting circuit
JPH0212967A (en) * 1988-06-30 1990-01-17 Nec Corp Solid state image sensor
FR2657207A1 (en) * 1990-01-16 1991-07-19 Thomson Csf DEVICE FOR TRANSFERRING EXPANDED DYNAMIC LOADS.

Also Published As

Publication number Publication date
JPS6138624B2 (en) 1986-08-30

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