JPS5562768A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5562768A
JPS5562768A JP13578078A JP13578078A JPS5562768A JP S5562768 A JPS5562768 A JP S5562768A JP 13578078 A JP13578078 A JP 13578078A JP 13578078 A JP13578078 A JP 13578078A JP S5562768 A JPS5562768 A JP S5562768A
Authority
JP
Japan
Prior art keywords
emitters
emitter
total area
main surface
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13578078A
Other languages
Japanese (ja)
Inventor
Masahiko Yamada
Masaru Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Priority to JP13578078A priority Critical patent/JPS5562768A/en
Publication of JPS5562768A publication Critical patent/JPS5562768A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE: To prevent the damage at symmetry properties even when the relative locations of n emitters mounted on two main surfaces slip or even when cutting position, shifts, by dividing an n emitter into more than one portions, and by uniformly distributing and arranging the emitters.
CONSTITUTION: An n emitter 7 is partitioned, and equally shared and disposed onto a main surface. Since it is necessary to moderate the rate of the total area of the n emitter 7 occupying in one device to the total area of a p base 8 exposed on the main surface and the n mitter is approximately half the p base generally, the dimensions of the divided emitters 7 and spacing are equalized or the emitters are made larger. Thus, the device is not formed in asymmetry in a shape as compared with the conventional devices, and an SSS device, a pnpn switch element, etc. can be manufactured.
COPYRIGHT: (C)1980,JPO&Japio
JP13578078A 1978-11-06 1978-11-06 Semiconductor device Pending JPS5562768A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13578078A JPS5562768A (en) 1978-11-06 1978-11-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13578078A JPS5562768A (en) 1978-11-06 1978-11-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5562768A true JPS5562768A (en) 1980-05-12

Family

ID=15159674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13578078A Pending JPS5562768A (en) 1978-11-06 1978-11-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5562768A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171273A (en) * 1987-12-25 1989-07-06 Fuji Electric Co Ltd Bidirectional semiconductor switching element
JPH03215978A (en) * 1990-01-22 1991-09-20 Shindengen Electric Mfg Co Ltd Bidirectional diode-thyristor
JPH03239367A (en) * 1990-02-16 1991-10-24 Shindengen Electric Mfg Co Ltd Bidirectional 2-terminal thyristor
JPH0574321A (en) * 1991-07-29 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> Surge protecting element
JPH0653487A (en) * 1992-07-29 1994-02-25 Nippon Telegr & Teleph Corp <Ntt> Surge protective element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01171273A (en) * 1987-12-25 1989-07-06 Fuji Electric Co Ltd Bidirectional semiconductor switching element
JPH03215978A (en) * 1990-01-22 1991-09-20 Shindengen Electric Mfg Co Ltd Bidirectional diode-thyristor
JPH03239367A (en) * 1990-02-16 1991-10-24 Shindengen Electric Mfg Co Ltd Bidirectional 2-terminal thyristor
JPH0574321A (en) * 1991-07-29 1993-03-26 Nippon Telegr & Teleph Corp <Ntt> Surge protecting element
JPH0653487A (en) * 1992-07-29 1994-02-25 Nippon Telegr & Teleph Corp <Ntt> Surge protective element

Similar Documents

Publication Publication Date Title
JPS5562768A (en) Semiconductor device
JPS55165674A (en) Semiconductor device
JPS5356972A (en) Mesa type semiconductor device
JPS5363993A (en) Production of semiconductor device
JPS51128277A (en) Semiconductor unit
JPS5363871A (en) Production of semiconductor device
JPS5310273A (en) Mesa type semiconductor device
JPS5396666A (en) Manufacture of semiconductor device with pn junction
JPS52129380A (en) Semiconductor device
JPS52107777A (en) Production of semiconductor unit
JPS5353254A (en) Semiconductor device
JPS5326580A (en) Semiconductor unit
JPS5376760A (en) Semiconductor rectifying device
JPS53139476A (en) Manufacture of semiconductor device
JPS5353271A (en) Manufacture for semiconductor device
JPS5342565A (en) Hetero junction transistor
JPS52100881A (en) Production of semiconductor device
JPS526081A (en) Semiconductor wafer
JPS53127271A (en) Semiconductor device
JPS5338981A (en) Semiconductor device
JPS5384483A (en) Semiconductor device
JPS52146209A (en) Formation of epitaxial layer
JPS53140975A (en) Semiconductor device
JPS5310278A (en) Production of semiconductor device
JPS52141575A (en) Manufacture of semiconductor device