JPS5561036A - Supporting method for gas phase growth of magnesia spinel - Google Patents

Supporting method for gas phase growth of magnesia spinel

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Publication number
JPS5561036A
JPS5561036A JP13434778A JP13434778A JPS5561036A JP S5561036 A JPS5561036 A JP S5561036A JP 13434778 A JP13434778 A JP 13434778A JP 13434778 A JP13434778 A JP 13434778A JP S5561036 A JPS5561036 A JP S5561036A
Authority
JP
Japan
Prior art keywords
thickness
variation
tube
layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13434778A
Other languages
Japanese (ja)
Inventor
Masaru Ihara
Hideki Yamawaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13434778A priority Critical patent/JPS5561036A/en
Publication of JPS5561036A publication Critical patent/JPS5561036A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To reduce variation of thickness in surface and lattice constant of epi- layer by setting a circular plate vertically to gas flow of reaction material in up stream of a single crystal base.
CONSTITUTION: A circular plate 80 is set vertically to gas flow at diatance L from a single crystal base 10 in the up stream. The plate 80 is made of ultra pure quartz glass, alumina etc., and the diameter is more than that of the base and the distance L is also more than twice of the diameter. The base, MgCl2 30 and Al 40 are heated up to 1200, 900 and 600°C respectively, and H2 of 500cc/min from a tube 51, CO2 and H2 of 20 and 1500cc/min from a tube 52 and HCl and H2 of 60 and 5000cc/min from a tube 53, respectively are introduced. These gases are completely mixed. Variation of thickness in the surface is less than ±0.06% against a lattice constant being an average 8.05 Å and the variation is less than ±5% against the thickness of layer 1μ. So, the epi-layer of magnesia spinel (MgO.Al2O3) having extremely small variation on the thickness is obtained.
COPYRIGHT: (C)1980,JPO&Japio
JP13434778A 1978-10-31 1978-10-31 Supporting method for gas phase growth of magnesia spinel Pending JPS5561036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13434778A JPS5561036A (en) 1978-10-31 1978-10-31 Supporting method for gas phase growth of magnesia spinel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13434778A JPS5561036A (en) 1978-10-31 1978-10-31 Supporting method for gas phase growth of magnesia spinel

Publications (1)

Publication Number Publication Date
JPS5561036A true JPS5561036A (en) 1980-05-08

Family

ID=15126226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13434778A Pending JPS5561036A (en) 1978-10-31 1978-10-31 Supporting method for gas phase growth of magnesia spinel

Country Status (1)

Country Link
JP (1) JPS5561036A (en)

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