JPS5555576A - Method of fabricating semiconductor element - Google Patents
Method of fabricating semiconductor elementInfo
- Publication number
- JPS5555576A JPS5555576A JP12899878A JP12899878A JPS5555576A JP S5555576 A JPS5555576 A JP S5555576A JP 12899878 A JP12899878 A JP 12899878A JP 12899878 A JP12899878 A JP 12899878A JP S5555576 A JPS5555576 A JP S5555576A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- semiconductor
- mask
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Pressure Sensors (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE: To provide the subject method comprising the steps of: laminating and coating a metal layer having an excellent adhesion to a semiconductor and an excellent etching liquid resistance successively on the surface of a semiconductor, and subjecting the semiconductor to etching using as a mask the thus laminated layer thereby to form a semiconductor structure excellent in etching liquid resistance and brazing property.
CONSTITUTION: A first layer 4 having a good adhesion to Si and a second layer 6 having a good etching liquid resistance are laminated on a Si substrate 1, and the substrate 1 is subjected to etching using the laminated layer as a mask thereby to form a recession 8. Then, by utilizing metal coatings 4 and 6, a third layer 51 is deposited in an electrolytic layer by an electroplating method, and is subjected to dicing at the planes A and B. Accordingly, in etching, the metal layer used as a mask has an excellent etching resistance and its lower layer is not corroded and furthermore a metal layer having an excellent brazing property is provided by an electroplating method, and hence it is possible to produce a pressure sensing Si diaphragm easy to braze, having a good dimensional accuracy and a smooth bonding surface.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12899878A JPS5555576A (en) | 1978-10-19 | 1978-10-19 | Method of fabricating semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12899878A JPS5555576A (en) | 1978-10-19 | 1978-10-19 | Method of fabricating semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5555576A true JPS5555576A (en) | 1980-04-23 |
Family
ID=14998601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12899878A Pending JPS5555576A (en) | 1978-10-19 | 1978-10-19 | Method of fabricating semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5555576A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5316346A (en) * | 1976-06-12 | 1978-02-15 | Nichidoku Heavy Mach | Point apparatus for wire and refining iron material passageway |
| JPS53119694A (en) * | 1977-03-29 | 1978-10-19 | Toshiba Corp | Semiconductor pressure transducer |
-
1978
- 1978-10-19 JP JP12899878A patent/JPS5555576A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5316346A (en) * | 1976-06-12 | 1978-02-15 | Nichidoku Heavy Mach | Point apparatus for wire and refining iron material passageway |
| JPS53119694A (en) * | 1977-03-29 | 1978-10-19 | Toshiba Corp | Semiconductor pressure transducer |
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