JPS5550112B2 - - Google Patents

Info

Publication number
JPS5550112B2
JPS5550112B2 JP13483877A JP13483877A JPS5550112B2 JP S5550112 B2 JPS5550112 B2 JP S5550112B2 JP 13483877 A JP13483877 A JP 13483877A JP 13483877 A JP13483877 A JP 13483877A JP S5550112 B2 JPS5550112 B2 JP S5550112B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13483877A
Other languages
Japanese (ja)
Other versions
JPS5376139A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5376139A publication Critical patent/JPS5376139A/ja
Publication of JPS5550112B2 publication Critical patent/JPS5550112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
JP13483877A 1976-12-17 1977-11-11 Silicon etch component Granted JPS5376139A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75161976A 1976-12-17 1976-12-17

Publications (2)

Publication Number Publication Date
JPS5376139A JPS5376139A (en) 1978-07-06
JPS5550112B2 true JPS5550112B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-12-16

Family

ID=25022795

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13483877A Granted JPS5376139A (en) 1976-12-17 1977-11-11 Silicon etch component

Country Status (4)

Country Link
JP (1) JPS5376139A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2752482A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2374396A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1588843A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022521U (ja) * 1983-07-19 1985-02-16 横浜ゴム株式会社 防舷装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153338A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Surface treatment of semiconductor substrate
DE2951292A1 (de) * 1979-12-20 1981-07-02 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zum dotieren von siliciumkoerpern durch eindiffundieren von bor
US4536322A (en) * 1983-10-28 1985-08-20 Union Carbide Corporation Fluorescent corrosive fluoride solution
CA1313612C (en) * 1987-01-27 1993-02-16 Michael Scardera Etching solutions containing ammonium fluoride
SG47089A1 (en) * 1991-02-15 1998-03-20 Canon Kk Etching solution for etching porous silicon etching method using the etching solution and method of preparing semiconductor member using the etching solution
US6171512B1 (en) 1991-02-15 2001-01-09 Canon Kabushiki Kaisha Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution
EP0534474B1 (en) * 1991-09-27 2002-01-16 Canon Kabushiki Kaisha Method of processing a silicon substrate
WO2006054996A1 (en) * 2004-11-19 2006-05-26 Honeywell International Inc. Selective removal chemistries for semiconductor applications, methods of production and uses thereof
JP5017709B2 (ja) 2006-09-07 2012-09-05 ジルトロニック アクチエンゲゼルシャフト シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法
JP6941959B2 (ja) 2017-03-31 2021-09-29 関東化学株式会社 エッチング液組成物およびエッチング方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2847287A (en) * 1956-07-20 1958-08-12 Bell Telephone Labor Inc Etching processes and solutions
DE1287009C2 (de) * 1957-08-07 1975-01-09 Western Electric Co. Inc., New York, N.Y. (V.St.A.) Verfahren zur herstellung von halbleiterkoerpern
NL257610A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1959-11-05
FR1266612A (fr) * 1960-06-02 1961-07-17 Solutions d'attaque chimiques pour le traitement en surface des matériaux semiconducteurs
US3773578A (en) * 1970-12-01 1973-11-20 Us Army Method of continuously etching a silicon substrate
JPS50341A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-07 1975-01-06
JPS509268A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-30 1975-01-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022521U (ja) * 1983-07-19 1985-02-16 横浜ゴム株式会社 防舷装置

Also Published As

Publication number Publication date
FR2374396A1 (fr) 1978-07-13
DE2752482A1 (de) 1978-06-22
FR2374396B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-08-08
GB1588843A (en) 1981-04-29
JPS5376139A (en) 1978-07-06

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