JPS55500033A - - Google Patents

Info

Publication number
JPS55500033A
JPS55500033A JP50026879A JP50026879A JPS55500033A JP S55500033 A JPS55500033 A JP S55500033A JP 50026879 A JP50026879 A JP 50026879A JP 50026879 A JP50026879 A JP 50026879A JP S55500033 A JPS55500033 A JP S55500033A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50026879A
Other languages
Japanese (ja)
Other versions
JPH0160951B2 (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS55500033A publication Critical patent/JPS55500033A/ja
Publication of JPH0160951B2 publication Critical patent/JPH0160951B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
JP50026879A 1978-01-03 1979-01-02 Expired JPH0160951B2 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86654178A 1978-01-03 1978-01-03

Publications (2)

Publication Number Publication Date
JPS55500033A true JPS55500033A (fr) 1980-01-24
JPH0160951B2 JPH0160951B2 (fr) 1989-12-26

Family

ID=25347830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50026879A Expired JPH0160951B2 (fr) 1978-01-03 1979-01-02

Country Status (4)

Country Link
EP (1) EP0007910A4 (fr)
JP (1) JPH0160951B2 (fr)
GB (1) GB2060997A (fr)
WO (1) WO1979000474A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
CA1164562A (fr) * 1980-10-08 1984-03-27 Manabu Itsumi Memoire a semiconducteur
USD1020530S1 (en) * 2023-06-28 2024-04-02 Weiwen CAI Table ornament

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796927A (en) * 1970-12-16 1974-03-12 Bell Telephone Labor Inc Three dimensional charge coupled devices
US3893152A (en) * 1973-07-25 1975-07-01 Hung Chang Lin Metal nitride oxide semiconductor integrated circuit structure
US3893085A (en) * 1973-11-28 1975-07-01 Ibm Read mostly memory cell having bipolar and FAMOS transistor
CA1074009A (fr) * 1975-03-03 1980-03-18 Robert W. Brodersen Memoire a dispositif a transfert de charge
US3974486A (en) * 1975-04-07 1976-08-10 International Business Machines Corporation Multiplication mode bistable field effect transistor and memory utilizing same
DE2543628A1 (de) * 1975-09-30 1977-04-21 Siemens Ag Informationsspeicher zum speichern von information in form von elektrischen ladungstraegern und verfahren zu seinem betrieb
CH597997A5 (fr) * 1976-02-24 1978-04-28 Lpa Les Produits Associes
DE2642145A1 (de) * 1976-09-20 1978-03-23 Siemens Ag Verfahren zum betrieb einer cid-anordnung
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
NL7700879A (nl) * 1977-01-28 1978-08-01 Philips Nv Halfgeleiderinrichting.
NL7701172A (nl) * 1977-02-04 1978-08-08 Philips Nv Halfgeleidergeheugeninrichting.
DE2730798A1 (de) * 1977-07-07 1979-01-25 Siemens Ag Verfahren zum herstellen einer aus einem feldeffekttransistor mit isolierter steuerelektrode und einem kondensator integrierten halbleiterspeicherzelle
DE2736473A1 (de) * 1977-08-12 1979-02-22 Siemens Ag Verfahren zum herstellen einer ein- transistor-speicherzelle
DE2743948A1 (de) * 1977-09-29 1979-04-12 Siemens Ag Dynamisches halbleiter-speicherelement
GB2095901B (en) * 1977-10-13 1983-02-23 Mohsen Amr Mohamed An mos transistor
US4190466A (en) * 1977-12-22 1980-02-26 International Business Machines Corporation Method for making a bipolar transistor structure utilizing self-passivating diffusion sources

Also Published As

Publication number Publication date
JPH0160951B2 (fr) 1989-12-26
GB2060997A (en) 1981-05-07
EP0007910A4 (fr) 1980-11-28
EP0007910A1 (fr) 1980-02-06
WO1979000474A1 (fr) 1979-07-26

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