JPS5549425B2 - - Google Patents
Info
- Publication number
- JPS5549425B2 JPS5549425B2 JP6069676A JP6069676A JPS5549425B2 JP S5549425 B2 JPS5549425 B2 JP S5549425B2 JP 6069676 A JP6069676 A JP 6069676A JP 6069676 A JP6069676 A JP 6069676A JP S5549425 B2 JPS5549425 B2 JP S5549425B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H10P34/40—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
- H10D84/131—Thyristors having built-in components
- H10D84/135—Thyristors having built-in components the built-in components being diodes
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/581,255 US4238761A (en) | 1975-05-27 | 1975-05-27 | Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51145283A JPS51145283A (en) | 1976-12-14 |
| JPS5549425B2 true JPS5549425B2 (enExample) | 1980-12-11 |
Family
ID=24324472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51060696A Granted JPS51145283A (en) | 1975-05-27 | 1976-05-27 | Integrated amplification gate thyristor having gate drive turnnoff function and method of producing same |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4238761A (enExample) |
| JP (1) | JPS51145283A (enExample) |
| BE (1) | BE842125A (enExample) |
| CA (1) | CA1063250A (enExample) |
| DE (1) | DE2622193A1 (enExample) |
| FR (1) | FR2312859A1 (enExample) |
| GB (1) | GB1532097A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1599230A (en) * | 1977-08-26 | 1981-09-30 | Gen Electric | Unijunction transistors |
| FR2406301A1 (fr) * | 1977-10-17 | 1979-05-11 | Silicium Semiconducteur Ssc | Procede de fabrication de dispositifs semi-conducteurs rapides |
| DE2805813C3 (de) * | 1978-02-11 | 1984-02-23 | Semikron Gesellschaft Fuer Gleichrichterbau U. Elektronik Mbh, 8500 Nuernberg | l.PT 23.02.84 Halbleiteranordnung SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg, DE |
| US4314266A (en) * | 1978-07-20 | 1982-02-02 | Electric Power Research Institute, Inc. | Thyristor with voltage breakover current control separated from main emitter by current limit region |
| DE2945335A1 (de) * | 1979-11-09 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Lichtzuendbarer thyristor |
| DE19505387A1 (de) * | 1995-02-17 | 1996-08-22 | Abb Management Ag | Druckkontaktgehäuse für Halbleiterbauelemente |
| CN100372126C (zh) * | 2005-11-25 | 2008-02-27 | 清华大学 | 高频晶闸管 |
| DE102009051828B4 (de) * | 2009-11-04 | 2014-05-22 | Infineon Technologies Ag | Halbleiterbauelement mit Rekombinationszone und Graben sowie Verfahren zu dessen Herstellung |
| CN102456719B (zh) * | 2011-12-29 | 2014-02-26 | 东南大学 | 一种可提高pn结反向击穿电压的装置 |
| US20180233321A1 (en) * | 2017-02-16 | 2018-08-16 | Lam Research Corporation | Ion directionality esc |
| CN108615785B (zh) * | 2018-05-03 | 2019-09-27 | 电子科技大学 | 一种具有深n+空穴电流阻挡层的光控晶闸管 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
| US3487276A (en) * | 1966-11-15 | 1969-12-30 | Westinghouse Electric Corp | Thyristor having improved operating characteristics at high temperature |
| US3549961A (en) * | 1968-06-19 | 1970-12-22 | Int Rectifier Corp | Triac structure and method of manufacture |
| US3573572A (en) * | 1968-09-23 | 1971-04-06 | Int Rectifier Corp | Controlled rectifier having high rate-of-rise-of-current capability and low firing gate current |
| US3579060A (en) * | 1969-03-21 | 1971-05-18 | Gen Electric | Thyristor with improved current and voltage handling characteristics |
| BE758745A (fr) * | 1969-11-10 | 1971-05-10 | Westinghouse Electric Corp | Perfectionnements aux ou en rapport avec les dispositifs semiconducteurs |
| US3611066A (en) * | 1969-12-12 | 1971-10-05 | Gen Electric | Thyristor with integrated ballasted gate auxiliary thyristor portion |
| US3586932A (en) * | 1969-12-12 | 1971-06-22 | Gen Electric | Five layer gate controlled thyristor with novel turn on characteristics |
| US3681667A (en) * | 1969-12-12 | 1972-08-01 | Gen Electric | Controlled rectifier and triac with laterally off-set gate and auxiliary segments for accelerated turn on |
| CA927014A (en) * | 1970-05-07 | 1973-05-22 | Westinghouse Electric Corporation | Symmetrical switch having a single gate for controlling firing in both directions |
| DE2211116A1 (de) * | 1972-03-08 | 1973-09-13 | Semikron Gleichrichterbau | Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps |
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| US3881964A (en) * | 1973-03-05 | 1975-05-06 | Westinghouse Electric Corp | Annealing to control gate sensitivity of gated semiconductor devices |
| US3896476A (en) * | 1973-05-02 | 1975-07-22 | Mitsubishi Electric Corp | Semiconductor switching device |
| US4083063A (en) * | 1973-10-09 | 1978-04-04 | General Electric Company | Gate turnoff thyristor with a pilot scr |
| JPS5718347B2 (enExample) * | 1974-01-07 | 1982-04-16 |
-
1975
- 1975-05-27 US US05/581,255 patent/US4238761A/en not_active Expired - Lifetime
-
1976
- 1976-04-27 CA CA251,209A patent/CA1063250A/en not_active Expired
- 1976-05-19 DE DE19762622193 patent/DE2622193A1/de not_active Withdrawn
- 1976-05-20 FR FR7615287A patent/FR2312859A1/fr not_active Withdrawn
- 1976-05-21 BE BE167262A patent/BE842125A/xx unknown
- 1976-05-21 GB GB21027/76A patent/GB1532097A/en not_active Expired
- 1976-05-27 JP JP51060696A patent/JPS51145283A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB1532097A (en) | 1978-11-15 |
| CA1063250A (en) | 1979-09-25 |
| US4238761A (en) | 1980-12-09 |
| BE842125A (fr) | 1976-11-22 |
| JPS51145283A (en) | 1976-12-14 |
| FR2312859A1 (fr) | 1976-12-24 |
| DE2622193A1 (de) | 1976-12-16 |