JPS553834B2 - - Google Patents

Info

Publication number
JPS553834B2
JPS553834B2 JP2005372A JP2005372A JPS553834B2 JP S553834 B2 JPS553834 B2 JP S553834B2 JP 2005372 A JP2005372 A JP 2005372A JP 2005372 A JP2005372 A JP 2005372A JP S553834 B2 JPS553834 B2 JP S553834B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2005372A
Other languages
Japanese (ja)
Other versions
JPS4919782A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2005372A priority Critical patent/JPS553834B2/ja
Publication of JPS4919782A publication Critical patent/JPS4919782A/ja
Publication of JPS553834B2 publication Critical patent/JPS553834B2/ja
Expired legal-status Critical Current

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  • Led Devices (AREA)
JP2005372A 1972-02-26 1972-02-26 Expired JPS553834B2 (en:Method)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005372A JPS553834B2 (en:Method) 1972-02-26 1972-02-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005372A JPS553834B2 (en:Method) 1972-02-26 1972-02-26

Publications (2)

Publication Number Publication Date
JPS4919782A JPS4919782A (en:Method) 1974-02-21
JPS553834B2 true JPS553834B2 (en:Method) 1980-01-26

Family

ID=12016313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005372A Expired JPS553834B2 (en:Method) 1972-02-26 1972-02-26

Country Status (1)

Country Link
JP (1) JPS553834B2 (en:Method)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19523158A1 (de) * 1993-12-27 1997-01-09 Toyoda Gosei Kk Verfahren zur Herstellung von saphirlosen Halbleitern aus einer Nitridverbindung der Gruppe III und durch dieses Verfahren hergestellte Halbleiter
US5886367A (en) * 1996-08-07 1999-03-23 Showa Denko K.K. Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer
WO2007111255A1 (ja) 2006-03-24 2007-10-04 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法及びランプ
DE112006002403T5 (de) 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
WO2009041237A1 (ja) 2007-09-27 2009-04-02 Showa Denko K.K. Ⅲ族窒化物半導体発光素子
WO2009050955A1 (ja) 2007-10-19 2009-04-23 Showa Denko K.K. Ⅲ族窒化物半導体発行素子
US7573075B2 (en) 2004-03-30 2009-08-11 Showa Denko K.K. Compound semiconductor device, production method of compound semiconductor device and diode
US7646040B2 (en) 2002-11-28 2010-01-12 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
US7732832B2 (en) 2004-04-28 2010-06-08 Showa Denko K.K. Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
US8299451B2 (en) 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
US9324912B2 (en) 2011-05-19 2016-04-26 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting element and method for producing same

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5198134A (en:Method) * 1975-02-25 1976-08-28
JPH0639792Y2 (ja) * 1988-07-29 1994-10-19 石川島播磨重工業株式会社 篩渣等の定量供給装置
JPH04192586A (ja) * 1990-11-27 1992-07-10 Pioneer Electron Corp 半導体発光素子
US6936863B2 (en) 2002-11-18 2005-08-30 Showa Denko K.K. Boron phosphide-based semiconductor light-emitting device, production method thereof and light-emitting diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19523158C2 (de) * 1993-12-27 2001-10-31 Toyoda Gosei Kk Verfahren zur Herstellung von selbsttragenden Halbleiterschichten aus Al¶x¶Ga¶y¶In¶1¶¶-¶¶x¶¶-¶¶y¶N und Verwendung der Halbleiterschichten
DE19523158A1 (de) * 1993-12-27 1997-01-09 Toyoda Gosei Kk Verfahren zur Herstellung von saphirlosen Halbleitern aus einer Nitridverbindung der Gruppe III und durch dieses Verfahren hergestellte Halbleiter
US5886367A (en) * 1996-08-07 1999-03-23 Showa Denko K.K. Epitaxial wafer device including an active layer having a two-phase structure and light-emitting device using the wafer
DE19734034C2 (de) * 1996-08-07 2000-07-13 Showa Denko Kk Epitaxiewafer für Licht emittierende Vorrichtung, Verfahren zum Bilden des Wafers und den Wafer verwendende, Licht emittierende Vorrichtung
US7646040B2 (en) 2002-11-28 2010-01-12 Showa Denko K.K. Boron phosphide-based compound semiconductor device, production method thereof and light emitting diode
US7573075B2 (en) 2004-03-30 2009-08-11 Showa Denko K.K. Compound semiconductor device, production method of compound semiconductor device and diode
US7732832B2 (en) 2004-04-28 2010-06-08 Showa Denko K.K. Compound semiconductor light-emitting device including p-type undoped boron-phosphide-based semiconductor layer joined to thin-film layer composed of an undoped hexagonal group III nitride semiconductor
US8084781B2 (en) 2005-09-07 2011-12-27 Showa Denko K.K. Compound semiconductor device
DE112006002403T5 (de) 2005-09-07 2008-07-10 Showa Denko K.K. Verbindungshalbleiter-Bauelement
US8299451B2 (en) 2005-11-07 2012-10-30 Showa Denko K.K. Semiconductor light-emitting diode
US8049227B2 (en) 2006-03-24 2011-11-01 Showa Denko K.K. Group III nitride semiconductor light emitting device, method for producing the same, and lamp thereof
WO2007111255A1 (ja) 2006-03-24 2007-10-04 Showa Denko K.K. Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法及びランプ
WO2009041237A1 (ja) 2007-09-27 2009-04-02 Showa Denko K.K. Ⅲ族窒化物半導体発光素子
WO2009050955A1 (ja) 2007-10-19 2009-04-23 Showa Denko K.K. Ⅲ族窒化物半導体発行素子
US8227790B2 (en) 2007-10-19 2012-07-24 Showa Denko K.K. Group III nitride semiconductor light-emitting device
US9324912B2 (en) 2011-05-19 2016-04-26 Toyoda Gosei Co., Ltd. Group III nitride semiconductor light-emitting element and method for producing same

Also Published As

Publication number Publication date
JPS4919782A (en:Method) 1974-02-21

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