JPS553829B2 - - Google Patents
Info
- Publication number
- JPS553829B2 JPS553829B2 JP12446772A JP12446772A JPS553829B2 JP S553829 B2 JPS553829 B2 JP S553829B2 JP 12446772 A JP12446772 A JP 12446772A JP 12446772 A JP12446772 A JP 12446772A JP S553829 B2 JPS553829 B2 JP S553829B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
- H10P50/646—Chemical etching of Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
Landscapes
- Bipolar Transistors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20962071A | 1971-12-20 | 1971-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4870483A JPS4870483A (https=) | 1973-09-25 |
| JPS553829B2 true JPS553829B2 (https=) | 1980-01-26 |
Family
ID=22779532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12446772A Expired JPS553829B2 (https=) | 1971-12-20 | 1972-12-13 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3780359A (https=) |
| JP (1) | JPS553829B2 (https=) |
| DE (1) | DE2259237A1 (https=) |
| FR (1) | FR2164634B1 (https=) |
| GB (1) | GB1404996A (https=) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4943583A (https=) * | 1972-08-30 | 1974-04-24 | ||
| AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
| CA1049127A (en) * | 1974-03-05 | 1979-02-20 | Kunio Itoh | Semiconductor devices with improved heat radiation and current concentration |
| US3900863A (en) * | 1974-05-13 | 1975-08-19 | Westinghouse Electric Corp | Light-emitting diode which generates light in three dimensions |
| RO68248A2 (ro) * | 1974-11-08 | 1981-03-30 | Institutul De Fizica,Ro | Dispozitiv semiconductor cu efect de memorie |
| JPS5928992B2 (ja) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | Ｍｏｓトランジスタおよびその製造方法 |
| JPS5215262A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacturing method |
| US4075043A (en) * | 1976-09-01 | 1978-02-21 | Rockwell International Corporation | Liquid phase epitaxy method of growing a junction between two semiconductive materials utilizing an interrupted growth technique |
| US4173763A (en) * | 1977-06-09 | 1979-11-06 | International Business Machines Corporation | Heterojunction tunneling base transistor |
| US4160258A (en) * | 1977-11-18 | 1979-07-03 | Bell Telephone Laboratories, Incorporated | Optically coupled linear bilateral transistor |
| US4179534A (en) * | 1978-05-24 | 1979-12-18 | Bell Telephone Laboratories, Incorporated | Gold-tin-gold ohmic contact to N-type group III-V semiconductors |
| JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
| JPS56133867A (en) * | 1980-03-21 | 1981-10-20 | Semiconductor Res Found | Thermoelectric emission transistor |
| US4573064A (en) * | 1981-11-02 | 1986-02-25 | Texas Instruments Incorporated | GaAs/GaAlAs Heterojunction bipolar integrated circuit devices |
| US4750025A (en) * | 1981-12-04 | 1988-06-07 | American Telephone And Telegraph Company, At&T Bell Laboratories | Depletion stop transistor |
| US4459605A (en) * | 1982-04-26 | 1984-07-10 | Acrian, Inc. | Vertical MESFET with guardring |
| US4586071A (en) * | 1984-05-11 | 1986-04-29 | International Business Machines Corporation | Heterostructure bipolar transistor |
| JPS6144461A (ja) * | 1984-08-08 | 1986-03-04 | Matsushita Electric Ind Co Ltd | ヘテロ接合トランジスタの製造方法 |
| EP0206787B1 (en) * | 1985-06-21 | 1991-12-18 | Matsushita Electric Industrial Co., Ltd. | Heterojunction bipolar transistor and method of manufacturing same |
| JPH07105487B2 (ja) * | 1985-10-08 | 1995-11-13 | 富士通株式会社 | 半導体装置 |
| GB8607822D0 (en) * | 1986-03-27 | 1986-04-30 | Plessey Co Plc | Iii-v semiconductor devices |
| JPS63168049A (ja) * | 1986-12-29 | 1988-07-12 | Nec Corp | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
| US4825265A (en) * | 1987-09-04 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Transistor |
| US5027182A (en) * | 1990-10-11 | 1991-06-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks |
| EP0562272A3 (en) * | 1992-03-23 | 1994-05-25 | Texas Instruments Inc | Microwave heterojunction bipolar transistors with emitters designed for high power applications and method for fabricating same |
| JPH0669227A (ja) * | 1992-05-29 | 1994-03-11 | Texas Instr Inc <Ti> | 化合物半導体のヘテロ接合バイポーラトランジスタ及びその製造方法 |
| US5672522A (en) * | 1996-03-05 | 1997-09-30 | Trw Inc. | Method for making selective subcollector heterojunction bipolar transistors |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1489613A (https=) * | 1965-08-19 | 1967-11-13 | ||
| US3380153A (en) * | 1965-09-30 | 1968-04-30 | Westinghouse Electric Corp | Method of forming a semiconductor integrated circuit that includes a fast switching transistor |
| US3413533A (en) * | 1966-03-28 | 1968-11-26 | Varian Associates | Heterojunction semiconductor devices employing carrier multiplication in a high gap ratio emitterbase heterojunction |
| US3473977A (en) * | 1967-02-02 | 1969-10-21 | Westinghouse Electric Corp | Semiconductor fabrication technique permitting examination of epitaxially grown layers |
| JPS5141318B1 (https=) * | 1969-04-01 | 1976-11-09 |
-
1971
- 1971-12-20 US US00209620A patent/US3780359A/en not_active Expired - Lifetime
-
1972
- 1972-11-07 GB GB5129072A patent/GB1404996A/en not_active Expired
- 1972-12-04 DE DE2259237A patent/DE2259237A1/de not_active Withdrawn
- 1972-12-04 FR FR7244639A patent/FR2164634B1/fr not_active Expired
- 1972-12-13 JP JP12446772A patent/JPS553829B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1404996A (en) | 1975-09-03 |
| JPS4870483A (https=) | 1973-09-25 |
| US3780359A (en) | 1973-12-18 |
| FR2164634B1 (https=) | 1976-06-04 |
| DE2259237A1 (de) | 1973-06-28 |
| FR2164634A1 (https=) | 1973-08-03 |